The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
Abstract
We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance. The device exhibited an excellent pinch-off and a low parasitic output conductance in the saturation regime. We measured the cutoff frequency fT and the maximum oscillation frequency fmax as 11 and 35 GHz, respectively. These values are superior to the highest reported values for field effect transistors based on other wide band-gap semiconductors such as SiC. These results demonstrate an excellent potential of AlGaN/GaN HFETs for microwave and millimeter wave applications.
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Citations
Cites
High electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
Asif Khan, M., Bhattarai, A., Kuznia, J. N., & Olson, D. T. (1993) · Applied Physics Letters · doi:10.1063/1.109775 · Cited by 911
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A Survey of Wide Bandgap Power Semiconductor Devices
Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2268900 · Cited by 2,685
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Vetury, R., Zhang, N. Q., Keller, S., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906451 · Cited by 1,453
Hoo Teo, K., Zhang, Y., Chowdhury, N., Rakheja, S., Ma, R., Xie, Q., Yagyu, E., Yamanaka, K., Li, K., & Palacios, T. (2021) · Journal of Applied Physics · doi:10.1063/5.0061555 · Cited by 322
Metadata
- Authors
- Asif Khan, M., Kuznia, J. N., Olson, D. T., Schaff, W. J., Burm, J. W., & Shur, M. S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1994-08-29
- Volume
- 65
- Issue
- 9
- Pages
- 1121-1123
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2495244888
- Cited by
- 371
- References
- 1
- FWCI
- 13.69
- Type
- journal article
- Language
- en
- Open access
- closed
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- Asif Khan, M., Kuznia, J. N., Olson, D. T., Schaff, W. J., Burm, J. W., & Shur, M. S. (1994). Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor. Applied Physics Letters. https://doi.org/10.1063/1.112116
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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