The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Abstract
GaN based HFETs are of tremendous interest in applications requiring high power at microwave frequencies. Although excellent current-voltage (I-V) characteristics and record high output power densities at microwave frequencies have been achieved, the origin of the 2DEG and the factors limiting the output power and reliability of the devices under high power operation remain uncertain. Drain current collapse has been the major obstacle in the development of reliable high power devices. We show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region. Due to the large bias voltages present on the device during a microwave power measurement, surface states in the vicinity of the gate trap electrons, thus acting as a negatively charged virtual gate. The maximum current available from a device during a microwave power measurement is limited by the discharging of this virtual gate. Passivated devices located adjacent to unpassivated devices on the same wafer show almost no current collapse, thus demonstrating that proper surface passivation prevents the formation of the virtual gate. The possible mechanisms by which a surface passivant reduces current collapse and the factors affecting reliability and stability of such a passivant are discussed.
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Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., et al. (1999) · Journal of Applied Physics · doi:10.1063/1.369664 · Cited by 3,022
Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., & Mishra, U. K. (2000) · Applied Physics Letters · doi:10.1063/1.126940 · Cited by 1,137
Self-citationThe effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
Green, B. M., Chu, K. K., Chumbes, E. M., Smart, J. A., Shealy, J. R., & Eastman, L. F. (2000) · IEEE Electron Device Letters · doi:10.1109/55.843146 · Cited by 744
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
Asif Khan, M., Kuznia, J. N., Olson, D. T., Schaff, W. J., Burm, J. W., & Shur, M. S. (1994) · Applied Physics Letters · doi:10.1063/1.112116 · Cited by 371
Keller, S., Wu, Y.-F., Parish, G., Ziang, N., Xu, J. J., Keller, B. P., DenBaars, S. P., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906450 · Cited by 200
Self-citation
Cited by
AlGaN/GaN HEMTs—An Overview of Device Operation and Applications
Mishra, U. K., Parikh, P., & Wu, Y.-F. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021567 · Cited by 2,312
Self-citationGaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Trapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Joh, J., & del Alamo, J. A. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2010.2087339 · Cited by 441
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
Metadata
- Authors
- Vetury, R., Zhang, N. Q., Keller, S., & Mishra, U. K.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2001-03
- Volume
- 48
- Issue
- 3
- Pages
- 560-566
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2137778525
- Cited by
- 1,453
- References
- 5
- FWCI
- 28.84
- Type
- journal article
- Language
- en
- Open access
- closed
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