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Highly efficient band-edge emission from InP quantum dots
Abstract
High quality InP quantum dots with diameters ranging from 25 to 45 Å, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.
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Cited by
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Sun, C. Q. (2007) · Progress in Solid State Chemistry · doi:10.1016/j.progsolidstchem.2006.03.001 · Cited by 873
Moriarty, P. (2001) · Reports on Progress in Physics · doi:10.1088/0034-4885/64/3/201 · Cited by 785
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Xu, G., Zeng, S., Zhang, B., Swihart, M. T., Yong, K.-T., & Prasad, P. N. (2016) · Chemical Reviews · doi:10.1021/acs.chemrev.6b00290 · Cited by 587
Metadata
- Authors
- Mićić, O. I., Sprague, J., Lu, Z., & Nozik, A. J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1996-05-27
- Volume
- 68
- Issue
- 22
- Pages
- 3150-3152
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1982600544
- Cited by
- 315
- References
- 0
- FWCI
- 5.52
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mićić, O. I., Sprague, J., Lu, Z., & Nozik, A. J. (1996). Highly efficient band-edge emission from InP quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.115807
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