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Highly efficient band-edge emission from InP quantum dots

Mićić, Olga I., Sprague, Julian, Lu, Zhenghao, Nozik, Arthur J.·1996·Applied Physics Letters

Abstract

High quality InP quantum dots with diameters ranging from 25 to 45 Å, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.

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Metadata

Authors
Mićić, O. I., Sprague, J., Lu, Z., & Nozik, A. J.
Venue
Applied Physics Letters
Published
1996-05-27
Volume
68
Issue
22
Pages
3150-3152
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1982600544
Cited by
315
References
0
FWCI
5.52
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Highly efficient band-edge emission from InP quantum dots. https://app.cochat.ai/papers/10.1063/1.115807
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Mićić, O. I., Sprague, J., Lu, Z., & Nozik, A. J. (1996). Highly efficient band-edge emission from InP quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.115807

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