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Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films
Abstract
Ferroelectric layered-oxides SrBi2Ta2O9 thin films were prepared on Pt coated Si wafers and single-crystal sapphire by metalorganic chemical vapor deposition (MOCVD). The films were specular and crack-free and showed complete crystallization at temperatures between 650 and 700 °C. Good ferroelectric properties were obtained for a 200 nm thick film with Pt electrodes: 2Pr and Ec were about 8.3 μC/cm2 and 60 kV/cm, respectively. The leakage currents were as low as 8×10−9 A/cm2 at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4×1010 switching cycles. These high quality MOCVD films make high-intensity (≳1 Mbit) nonvolatile memory devices possible.
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Cited by
Rahim, A., Hermans, A., Wohlfeil, B., Petousi, D., Kuyken, B., Van Thourhout, D., & Baets, R. G. (2021) · Advanced Photonics · doi:10.1117/1.ap.3.2.024003 · Cited by 391
Mehring, M. (2007) · Coordination Chemistry Reviews · doi:10.1016/j.ccr.2006.06.005 · Cited by 293
Metadata
- Authors
- Li, T., Zhu, Y., Desu, S. B., Peng, C.-H., & Nagata, M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1996-01-29
- Volume
- 68
- Issue
- 5
- Pages
- 616-618
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1978086324
- Cited by
- 205
- References
- 0
- FWCI
- 26.69
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, T., Zhu, Y., Desu, S. B., Peng, C.-H., & Nagata, M. (1996). Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films. Applied Physics Letters. https://doi.org/10.1063/1.116486
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