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Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
Abstract
In this letter we report on a metal–semiconductor–metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 μm, with a maximum responsivity of 0.24 A/W at 1.3 μm under a 1 V bias. A response time of about 2 ns has been measured.
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Citations
Cited by
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Saidaminov, M. I., Adinolfi, V., Comin, R., Abdelhady, A. L., Peng, W., Dursun, I., Yuan, M., Hoogland, S., Sargent, E. H., & Bakr, O. M. (2015) · Nature Communications · doi:10.1038/ncomms9724 · Cited by 734
The germanium quantum information route
Scappucci, G., Kloeffel, C., Zwanenburg, F. A., Loss, D., Myronov, M., Zhang, J.-J., De Franceschi, S., Katsaros, G., & Veldhorst, M. (2020) · Nature Reviews Materials · doi:10.1038/s41578-020-00262-z · Cited by 382
Liow, T.-Y., Ang, K.-W., Fang, Q., Song, J.-F., Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., & Kwong, D.-L. (2010) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2009.2028657 · Cited by 275
Germanium‐based integrated photonics from near‐ to mid‐infrared applications
Marris‐Morini, D., Vakarin, V., Ramirez, J. M., Liu, Q., Ballabio, A., Frigerio, J., Montesinos, M., Alonso‐Ramos, C., Le Roux, X., Serna, S., et al. (2017) · Nanophotonics · doi:10.1515/nanoph-2018-0113 · Cited by 205
GeSn p-i-n waveguide photodetectors on silicon substrates
Peng, Y.-H., Cheng, H. H., Mashanov, V. I., & Chang, G.-E. (2014) · Applied Physics Letters · doi:10.1063/1.4903881 · Cited by 98
Metadata
- Authors
- Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., Palange, E., & Evangelisti, F.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1998-06-15
- Volume
- 72
- Issue
- 24
- Pages
- 3175-3177
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2040575594
- Cited by
- 246
- References
- 0
- FWCI
- 7.29
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si. https://app.cochat.ai/papers/10.1063/1.121584
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- Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., Palange, E., & Evangelisti, F. (1998). Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si. Applied Physics Letters. https://doi.org/10.1063/1.121584
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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