The DOI matches its Crossref record.
GeSn p-i-n waveguide photodetectors on silicon substrates
Abstract
We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
The WG-QDPD outperforms monolithically grown GeSn (responsivity < 0.52 A/W and dark current > 1 mA).
“Notably, these results are on par with the best-performing bonded III-V photodetectors reported in the literature (responsivity 0.4-1.4 A/W around 2.3 μ m and dark current 10 nA-2.5 μ A), 6-9 outperforming monolithically grown GeSn (responsivity < 0.52 A/W and dark current > 1 mA). 13-16”
From A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µ m (2024) · cites this paper as [13]
Citations
Cites
No references could be resolved yet.
Research works printed but not linked: 32
- 1993, Proc. IEEE, 81, 1687, 10.1109/5.248958 · DOI
- 2007, Nat. Photonics, 1, 153, 10.1038/nphoton.2007.17 · DOI
- 2010, J. Appl. Phys., 108, 033107, 10.1063/1.3467766 · DOI
- 2010, Opt. Express, 18, 19957, 10.1364/OE.18.019957 · DOI
- 2010, IEEE J. Quantum Electron., 46, 1813, 10.1109/JQE.2010.2059000 · DOI
- 1998, Appl. Phys. Lett., 72, 3175, 10.1063/1.121584 · DOI
- 2005, IEEE Photonics Technol. Lett., 17, 1510, 10.1109/LPT.2005.848546 · DOI
- 2005, Appl. Phys. Letts., 87, 103501, 10.1063/1.2037200 · DOI
- 1997, Phys. Rev. Lett., 79, 1937, 10.1103/PhysRevLett.79.1937 · DOI
- 2009, Semicond. Sci. Technol., 24, 115006, 10.1088/0268-1242/24/11/115006 · DOI
- 2013, Opt. Lett., 38, 3485, 10.1364/OL.38.003485 · DOI
- 2014, Opt. Mater. Express, 4, 1178, 10.1364/OME.4.001178 · DOI
- 2009, Appl. Phys. Lett., 95, 133506, 10.1063/1.3238327 · DOI
- 2011, IEEE J. Quantum Electron., 47, 213, 10.1109/JQE.2010.2077273 · DOI
- 2011, Opt. Express, 19, 6400, 10.1364/OE.19.006400 · DOI
- 2012, Appl. Phys. Lett., 101, 141110, 10.1063/1.4757124 · DOI
- 2013, Appl. Phys. Lett., 102, 141111, 10.1063/1.4801957 · DOI
- 2013, Appl. Phys. Lett., 103, 231907, 10.1063/1.4840135 · DOI
- 2012, Opt. Express, 20, 27297, 10.1364/OE.20.027297 · DOI
- 2014, Opt. Express, 22, 15639, 10.1364/OE.22.015639 · DOI
- 2014, Opt. Express, 22, 11029, 10.1364/OE.22.011029 · DOI
- 2011, AIP Adv., 1, 042118, 10.1063/1.3656246 · DOI
- 2013, Appl. Phys. Lett., 102, 251907, 10.1063/1.4812490 · DOI
- 1999, Appl. Phys. Lett., 75, 2909, 10.1063/1.125187 · DOI
- 2003, Opt. Lett., 28, 1302, 10.1364/OL.28.001302 · DOI
- 2003, Integrated Optics: Theory and Technology
- 2007, Opt. Express, 15, 3916, 10.1364/OE.15.003916 · DOI
- 2009, Physics of Photonic Devices
- 2006, Physics of Semiconductor Devices
- 2007, Opt. Express, 15, 13965, 10.1364/OE.15.013965 · DOI
- 2009, Opt. Express, 17, 11246, 10.1364/OE.17.011246 · DOI
- 1985, Handbook of Optical Constants of Solids
Cited by
Sorted by citations
Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics
Ghosh, S., Bansal, R., Sun, G., Soref, R. A., Cheng, H.-H., & Chang, G.-E. (2022) · Sensors · doi:10.3390/s22113978 · Cited by 35
Self-citationA silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µ m
Pang, C., Deng, Y.-H., Kheradmand, E., Hagelsieb, L. M., Guo, Y., Cheyns, D., Geiregat, P., Hens, Z., & Van Thourhout, D. (2024) · APL Photonics · doi:10.1063/5.0206386 · Cited by 9
Metadata
- Authors
- Peng, Y.-H., Cheng, H. H., Mashanov, V. I., & Chang, G.-E.
- Affiliations
- National Chung Cheng University (TW)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-12-08
- Volume
- 105
- Issue
- 23
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2071784437
- Cited by
- 98
- References
- 0
- Citations by year
- 2026: 1 · 2025: 3 · 2024: 10 · 2023: 6 · 2022: 7 · 2021: 15 · 2020: 16 · 2019: 13 · 2018: 11 · 2017: 8 · 2016: 4 · 2015: 4
- FWCI
- 2.83
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Funders
- Ministry of Science and Technology, Taiwan (MOST 102-2221-E-194-053-MY3)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
- Keywords
- GeSn, silicon photonics, band gap narrowing, responsivity, quantum efficiency, device length, monolithic integration, germanium photodetectors
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
