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The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
Abstract
Density-functional-theory calculations have been performed to study the effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN. Four candidate structures were examined and their formation energies were found to depend strongly on Fermi level and growth stoichiometry. A structure having gallium vacancies at the dislocation core is predicted to be most stable in n-type material grown under nitrogen-rich conditions, while a structure without vacancies is most stable in p-type material grown under these conditions. In material grown under gallium-rich conditions, a structure having nitrogen vacancies at the dislocation core is predicted to be most stable in p-type material, whereas a variety of core structures should be present in n-type material. Edge dislocations are predicted to behave as electron traps in n-type material and may act as hole traps in p-type material depending on the growth conditions.
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Citations
Cites
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Cited by
Trapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
Metadata
- Authors
- Wright, A. F., & Grossner, U.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1998-11-09
- Volume
- 73
- Issue
- 19
- Pages
- 2751-2753
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2020579855
- Cited by
- 208
- References
- 1
- FWCI
- 9.03
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN. https://app.cochat.ai/papers/10.1063/1.122579
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- Wright, A. F., & Grossner, U. (1998). The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN. Applied Physics Letters. https://doi.org/10.1063/1.122579
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