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Cited by 450

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Molecular dynamics simulation of thermal conductivity of silicon nanowires

Volz, Sebastian G., Chen, Gang·1999·Applied Physics Letters

Abstract

We investigate the thermal conductivity of silicon nanowires based on molecular dynamics (MD) simulations. The simulated thermal conductivities of nanowires with square cross sections are found to be about two orders of magnitude smaller than those of bulk Si crystals in a wide range of temperatures (200–500 K) for both rigid and free boundary conditions. A solution of the Boltzmann transport equation is used to explore the possibility of explaining the MD results based on boundary scattering.

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Metadata

Authors
Volz, S. G., & Chen, G.
Venue
Applied Physics Letters
Published
1999-10-04
Volume
75
Issue
14
Pages
2056-2058
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2048507195
Cited by
450
References
1
FWCI
4.00
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Molecular dynamics simulation of thermal conductivity of silicon nanowires. https://app.cochat.ai/papers/10.1063/1.124914
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Volz, S. G., & Chen, G. (1999). Molecular dynamics simulation of thermal conductivity of silicon nanowires. Applied Physics Letters. https://doi.org/10.1063/1.124914

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.