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Electric-pulse-induced reversible resistance change effect in magnetoresistive films
Abstract
A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-dependent resistance changes of more than 1700% were observed under applied pulses of ∼100 ns duration and as low as ±5 V magnitude. The resistance changes were cumulative with pulse number, were reversible and nonvolatile. This electrically induced effect, observed in CMR materials at room temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronics arena including high-density nonvolatile memory.
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Cited by
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Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Nonequilibrium dynamical mean-field theory and its applications
Aoki, H., Tsuji, N., Eckstein, M., Kollar, M., Oka, T., & Werner, P. (2014) · Reviews of Modern Physics · doi:10.1103/revmodphys.86.779 · Cited by 773
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Metadata
- Authors
- Liu, S. Q., Wu, N. J., & Ignatiev, A.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2000-05-08
- Volume
- 76
- Issue
- 19
- Pages
- 2749-2751
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2022340946
- Cited by
- 843
- References
- 0
- FWCI
- 2.67
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liu, S. Q., Wu, N. J., & Ignatiev, A. (2000). Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Applied Physics Letters. https://doi.org/10.1063/1.126464
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