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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Abstract
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 Å.
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Citations
Cited by
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Vetury, R., Zhang, N. Q., Keller, S., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906451 · Cited by 1,453
Self-citationGaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Metadata
- Authors
- Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., & Mishra, U. K.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2000-07-10
- Volume
- 77
- Issue
- 2
- Pages
- 250-252
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1971958003
- Cited by
- 1,137
- References
- 0
- FWCI
- 20.48
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., & Mishra, U. K. (2000). Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Applied Physics Letters. https://doi.org/10.1063/1.126940
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