The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)
Abstract
As a function of thermal treatment, the chemical stability of ultrathin ZrO2 films prepared by chemical vapor deposition on a silicon substrate is investigated by x-ray photoelectron spectroscopy. The chemical structure is stable up to 800 °C in both vacuum and N2 ambient, but a reaction forming zirconium silicide occurs above 900 °C in vacuum. The formation of silicide is accounted for by a reaction mechanism involving a reaction of ZrO2 with SiO, the latter formed above 900 °C at the interface between Si(100) and the thin layer of SiO2 formed during growth of the ZrO2.
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Cites
Thermochemical properties of inorganic substances
Barin, I., Knacke, O., & Kubaschewski, O. (1977) · Springer eBooks · doi:10.1007/978-3-662-02293-1 · Cited by 4,521
Thermochemical data of pure substances
(1993) · Choice Reviews Online · doi:10.5860/choice.31-0632 · Cited by 4,494
Thermodynamic stability of binary oxides in contact with silicon
Hubbard, K. J., & Schlom, D. G. (1996) · Journal of Materials Research · doi:10.1557/jmr.1996.0350 · Cited by 1,242
Structure and stability of ultrathin zirconium oxide layers on Si(001)
Copel, M., Gribelyuk, M. A., & Gusev, E. (2000) · Applied Physics Letters · doi:10.1063/1.125779 · Cited by 670
Cited by
Chang, J. P., Lin, Y.-S., & Chu, K. (2001) · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · doi:10.1116/1.1396639 · Cited by 102
Metadata
- Authors
- Jeon, T. S., White, J. M., & Kwong, D. L.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2001-01-15
- Volume
- 78
- Issue
- 3
- Pages
- 368-370
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1572253984
- Cited by
- 270
- References
- 4
- FWCI
- 39.31
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jeon, T. S., White, J. M., & Kwong, D. L. (2001). Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100). Applied Physics Letters. https://doi.org/10.1063/1.1339994
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