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Thermodynamic stability of binary oxides in contact with silicon
Abstract
Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li 2 O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc 2 O 3, Y 2 O 3, and Re2 O 3, where Re is a rare earth), ThO 2, UO 2, ZrO 2, HfO 2, and Al 2 O 3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO 2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.
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Cited by
Crystalline Oxides on Silicon: The First Five Monolayers
McKee, R. A., Walker, F. J., & Chisholm, M. F. (1998) · Physical Review Letters · doi:10.1103/physrevlett.81.3014 · Cited by 1,019
Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)
Jeon, T. S., White, J. M., & Kwong, D. L. (2001) · Applied Physics Letters · doi:10.1063/1.1339994 · Cited by 270
Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)
Kirsch, P. D., Kang, C. S., Lozano, J., Lee, J. C., & Ekerdt, J. G. (2002) · Journal of Applied Physics · doi:10.1063/1.1455155 · Cited by 263
Chang, J. P., Lin, Y.-S., & Chu, K. (2001) · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · doi:10.1116/1.1396639 · Cited by 102
Chakraborty, A., & Sarkar, A. (2017) · Journal of Computational Electronics · doi:10.1007/s10825-017-0999-2 · Cited by 94
Metadata
- Authors
- Hubbard, K. J., & Schlom, D. G.
- Venue
- Journal of Materials Research
- Published
- 1996-11
- Volume
- 11
- Issue
- 11
- Pages
- 2757-2776
- ISSN
- 0884-1616 (ISSN-L)
- 0884-2914
- 2044-5326
- OpenAlex
- W2101781928
- Cited by
- 1,242
- References
- 0
- FWCI
- 18.79
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hubbard, K. J., & Schlom, D. G. (1996). Thermodynamic stability of binary oxides in contact with silicon. Journal of Materials Research. https://doi.org/10.1557/jmr.1996.0350
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