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Thermodynamic stability of binary oxides in contact with silicon

Hubbard, K. J., Schlom, D. G.·1996·Journal of Materials Research

Abstract

Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li 2 O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc 2 O 3, Y 2 O 3, and Re2 O 3, where Re is a rare earth), ThO 2, UO 2, ZrO 2, HfO 2, and Al 2 O 3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO 2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.

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Metadata

Authors
Hubbard, K. J., & Schlom, D. G.
Venue
Journal of Materials Research
Published
1996-11
Volume
11
Issue
11
Pages
2757-2776
ISSN
  • 0884-1616 (ISSN-L)
  • 0884-2914
  • 2044-5326
OpenAlex
W2101781928
Cited by
1,242
References
0
FWCI
18.79
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Thermodynamic stability of binary oxides in contact with silicon. https://app.cochat.ai/papers/10.1557/jmr.1996.0350
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Hubbard, K. J., & Schlom, D. G. (1996). Thermodynamic stability of binary oxides in contact with silicon. Journal of Materials Research. https://doi.org/10.1557/jmr.1996.0350

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