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Cited by 7,376

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Band parameters for III–V compound semiconductors and their alloys

Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R.·2001·Journal of Applied Physics

Abstract

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Metadata

Authors
Vurgaftman, I., Meyer, J. R., & Ram-Mohan, L. R.
Venue
Journal of Applied Physics
Published
2001-06-01
Volume
89
Issue
11
Pages
5815-5875
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W2006271366
Cited by
7,376
References
1
FWCI
86.28
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Band parameters for III–V compound semiconductors and their alloys. https://app.cochat.ai/papers/10.1063/1.1368156
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Vurgaftman, I., Meyer, J. R., & Ram-Mohan, L. R. (2001). Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics. https://doi.org/10.1063/1.1368156

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