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Band parameters for III–V compound semiconductors and their alloys
Abstract
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.
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Citations
Cites
Motion of Electrons and Holes in Perturbed Periodic Fields
Luttinger, J. M., & Kohn, W. (1955) · Physical Review · doi:10.1103/physrev.97.869 · Cited by 3,088
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Jungwirth, T., Niu, Q., & MacDonald, A. H. (2002) · Physical Review Letters · doi:10.1103/physrevlett.88.207208 · Cited by 944
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Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
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Fornieri, A., Whiticar, A. M., Setiawan, F., Portolés, E., Drachmann, A. C. C., Keselman, A., Gronin, S., Thomas, C., Wang, T., Kallaher, R., et al. (2019) · Nature · doi:10.1038/s41586-019-1068-8 · Cited by 394
Metadata
- Authors
- Vurgaftman, I., Meyer, J. R., & Ram-Mohan, L. R.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2001-06-01
- Volume
- 89
- Issue
- 11
- Pages
- 5815-5875
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2006271366
- Cited by
- 7,376
- References
- 1
- FWCI
- 86.28
- Type
- journal article
- Language
- en
- Open access
- closed
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- Vurgaftman, I., Meyer, J. R., & Ram-Mohan, L. R. (2001). Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics. https://doi.org/10.1063/1.1368156
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