The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
Open accessAbstract
Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor interfaces and their distribution in the semiconductor band gap are compared. The conductance method, the Berglund intergral, the Castagné–Vapaille (high-low frequency), and Terman methods are applied to admittance measurements from metal oxide semiconductor capacitors (MOSCAPs) with high-k/In0.53Ga0.47As interfaces with different interface trap densities. The results are discussed in the context of the specifics of the In0.53Ga0.47As band structure. The influence of different conduction band approximations for determining the ideal capacitance-voltage (CV) characteristics and those of the MOSCAP parameters on the extracted interface trap density are investigated. The origins of discrepancies in the interface trap densities determined from the different methods are discussed. Commonly observed features in the CV characteristics of high-k/In0.53Ga0.47As interfaces are interpreted and guidelines are developed to obtain reliable estimates for interface trap densities and the degree of Fermi level (un)pinning for high-k/In0.53Ga0.47As interfaces.
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Cites
Band parameters for III–V compound semiconductors and their alloys
Vurgaftman, I., Meyer, J. R., & Ram-Mohan, L. R. (2001) · Journal of Applied Physics · doi:10.1063/1.1368156 · Cited by 7,376
Statistics of the Recombinations of Holes and Electrons
Shockley, W., & Read, W. T. (1952) · Physical Review · doi:10.1103/physrev.87.835 · Cited by 6,589
MOS /metal oxide semiconductor/ physics and technology
Nicollian, E. H., & Brews, J. R. (1982) · CERN Document Server (European Organization for Nuclear Research) · Cited by 2,098
Nicollian, E. H., & Goetzberger, A. (1967) · Bell System Technical Journal · doi:10.1002/j.1538-7305.1967.tb01727.x · Cited by 1,861
Fundamentals of Carrier Transport
Lundstrom, M. (2000) · Cambridge University Press eBooks · doi:10.1017/cbo9780511618611 · Cited by 1,617
Terman, L. M. (1962) · Solid-State Electronics · doi:10.1016/0038-1101(62)90111-9 · Cited by 1,444
Surface states at steam-grown silicon-silicon dioxide interfaces
Berglund, C. N. (1966) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1966.15827 · Cited by 678
Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
Ye, P. D. (2008) · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · doi:10.1116/1.2905246 · Cited by 157
On the interface state density at In0.53Ga0.47As/oxide interfaces
Brammertz, G., Lin, H. C., Caymax, M. R., Meuris, M., Heyns, M., & Passlack, M. (2009) · Applied Physics Letters · doi:10.1063/1.3267104 · Cited by 106
Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation
Kim, E. J., Chagarov, E. A., Cagnon, J., Yu, Y., Kummel, A. C., Asbeck, P. M., Stemmer, S., Saraswat, K. C., & McIntyre, P. C. (2009) · Journal of Applied Physics · doi:10.1063/1.3266006 · Cited by 85
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Metadata
- Authors
- Engel-Herbert, R., Hwang, Y., & Stemmer, S.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2010-12-15
- Volume
- 108
- Issue
- 12
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2155968399
- Cited by
- 429
- References
- 10
- FWCI
- 14.70
- Type
- journal article
- Language
- en
- Open access
- bronze
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