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Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition

Elam, J. W., Groner, M. D., George, S. M.·2002·Review of Scientific Instruments

Abstract

A chemical reactor was constructed for growing thin films using atomic layer deposition (ALD) techniques. This reactor utilizes a viscous flow of inert carrier gas to transport the reactants to the sample substrates and to sweep the unused reactants and reaction products out of the reaction zone. A gas pulse switching method is employed for introducing the reactants. An in situ quartz crystal microbalance (QCM) in the reaction zone is used for monitoring the ALD film growth. By modifying a commercially available QCM housing and using polished QCM sensors, quantitative thickness measurements of the thin films grown by ALD are obtained in real time. The QCM is employed to characterize the performance of the viscous flow reactor during Al2O3 ALD.

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Metadata

Authors
Elam, J. W., Groner, M. D., & George, S. M.
Venue
Review of Scientific Instruments
Published
2002-08-01
Volume
73
Issue
8
Pages
2981-2987
ISSN
  • 0034-6748 (ISSN-L)
  • 1089-7623
OpenAlex
W1978389691
Cited by
570
References
0
FWCI
13.67
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition. https://app.cochat.ai/papers/10.1063/1.1490410
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Elam, J. W., Groner, M. D., & George, S. M. (2002). Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition. Review of Scientific Instruments. https://doi.org/10.1063/1.1490410

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.