The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors
Abstract
Organic vapor phase deposition was used to grow polycrystalline pentacene channel thin-film transistors. Substrate temperature, chamber pressure during film deposition, and growth rate were used to vary the crystalline grain size of pentacene films on O2-plasma treated SiO2 from 0.2 to 5 μm, leading to room-temperature saturation regime field-effect hole mobilities (μeff) from 0.05±0.02 to 0.5±0.1 cm2/V s, respectively. Surface treatment of SiO2 with octadecyltrichlorosilane (OTS) prior to pentacene deposition resulted in μeff⩽1.6 cm2/V s, and drain current on/off ratios of ⩽108 at room temperature, while dramatically reducing the average grain size. X-ray diffraction studies indicate that the OTS treatment decreases the order of the molecular stacks. This suggests an increased density of flat-lying molecules, accompanying the improvement of the hole mobility at the pentacene/OTS interface.
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Cites
1 retracted
RETRACTED ARTICLE: Superconductivity in molecular crystals induced by charge injection
Schön, J. H., Kloc, C., & Batlogg, B. J. (2000) · Nature · doi:10.1038/35021011 · Cited by 160
RetractedUltrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
Forrest, S. R. (1997) · Chemical Reviews · doi:10.1021/cr941014o · Cited by 1,866
Self-citationPentacene organic thin-film transistors-molecular ordering and mobility
Gundlach, D. J., Lin, Y.-Y., Jackson, T. N., et al. (1997) · IEEE Electron Device Letters · doi:10.1109/55.556089 · Cited by 778
Field-effect transistors made from solution-processed organic semiconductors
Brown, A. R., Jarrett, C. P., de Leeuw, D. M., & Matters, M. (1997) · Synthetic Metals · doi:10.1016/s0379-6779(97)80881-8 · Cited by 572
The crystal and molecular structure of pentacene
Campbell, R. B., Robertson, J. M., & Trotter, J. (1961) · Acta Crystallographica · doi:10.1107/s0365110x61002163 · Cited by 356
Physical vapor growth of centimeter-sized crystals of α-hexathiophene
Kloc, C., Simpkins, P. G., Siegrist, T., & Laudise, R. A. (1997) · Journal of Crystal Growth · doi:10.1016/s0022-0248(97)00370-9 · Cited by 342
Cited by
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
High-Performance OTFTs Using Surface-Modified Alumina Dielectrics
Kelley, T. W., Boardman, L. D., Dunbar, T. D., Muyres, D. V., Pellerite, M. J., & Smith, T. P. (2003) · The Journal of Physical Chemistry B · doi:10.1021/jp034352e · Cited by 401
Trinh, C., Whited, M. T., Steiner, A., Tassone, C. J., Toney, M. F., & Thompson, M. E. (2012) · Chemistry of Materials · doi:10.1021/cm3012777 · Cited by 26
Metadata
- Authors
- Shtein, M., Mapel, J., Benziger, J. B., & Forrest, S. R.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2002-07-08
- Volume
- 81
- Issue
- 2
- Pages
- 268-270
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2071871546
- Cited by
- 678
- References
- 6
- FWCI
- 39.61
- Type
- journal article
- Language
- en
- Open access
- closed
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- Shtein, M., Mapel, J., Benziger, J. B., & Forrest, S. R. (2002). Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors. Applied Physics Letters. https://doi.org/10.1063/1.1491009
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