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Cited by 40Ferroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesMultiferroics and related materials

Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process

Zhai, Jiwei, Yao, Y., Li, X., Hung, T. F., Xu, Z. K., Chen, Haydn, Colla, Eugene V., Wu, T. B.·2002·Journal of Applied Physics
DOI 10.1063/1.1505981
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Abstract

Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO3 on Pt/Ti/SiO2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

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Crossref · 10.1063/1.1505981

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18 of 18 references verified0 citation errors · 0 not checkable

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Research works printed but not linked: 4

  1. 2000, J. Appl. Phys., 87, 507
  2. 1996, MRS Bull., 21, 37
  3. 2001, J. Appl. Phys., 79, 4204
  4. 1999, J. Mater. Res., 15, 115

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Related

Authors
Zhai, J., Yao, Y., Li, X., Hung, T. F., Xu, Z. K., Chen, H., Colla, E. V., & Wu, T. B.
Affiliations
  • City University of Hong Kong (HK)
  • University of Illinois Urbana-Champaign (US)
  • National Tsing Hua University (TW)
ORCID
Venue
Journal of Applied Physics
Publisher
AIP Publishing
Published
2002-10-01
Volume
92
Issue
7
Pages
3990-3994
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
DOI
10.1063/1.1505981
OpenAlex
W1604586397
Semantic Scholar
fe3487eadbdfcf45665ca998902db1c632ea902f
Cited by
40
References
18
Citations by year
2023: 2 · 2022: 1 · 2021: 1 · 2020: 1 · 2019: 2 · 2018: 2 · 2017: 2 · 2016: 3 · 2015: 1 · 2014: 1 · 2013: 1
FWCI
2.11
Type
journal article
Language
en
Open access
closed
Locations
Journal of Applied Physics (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
Keywords
PbZrO3, antiferroelectric thin films, dielectric properties, LaNiO3 buffer layer, remanent polarization, hysteresis loops, frequency and temperature dependence, perovskite structure

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