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Cited by 52Radio Frequency Integrated Circuit DesignAnalog and Mixed-Signal Circuit DesignSuperconducting and THz Device Technology

The DOI matches its Crossref record.

Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1 K

Oukhanski, N., Grajcar, M., Il’ichev, E., Meyer, H.-G.·2003·Review of Scientific Instruments
DOI 10.1063/1.1532539
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Abstract

Low noise three-stage pseudomorphic high electron mobility field-effect transistors amplifier were designed for the temperature range below 1 K. A minimum noise temperature TN≈100 mK was measured at an ambient temperature of about 380 mK at frequencies between 1 and 4 MHz for a source resistance of 10 kΩ. The gain of the amplifier was 50 at a power consumption of about 200 μW. The noise parameters of the amplifier are stable to within 30%, for a power consumption in the range of 100–300 μW. Minimum voltage spectral noise density of the amplifier with respect to the input is about 200 pV/Hz1/2 and the corner frequency of the 1/f noise is close to 300 kHz.

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Research works printed but not linked: 3

  1. 1999, Science, 285, 1036, 10.1126/science.285.5430.1036 · DOI
  2. 2001, Rev. Sci. Instrum., 72, 1882, 10.1063/1.1347374 · DOI
  3. 2002, Appl. Phys. Lett., 80, 4184, 10.1063/1.1481988 · DOI

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Metadata

Authors
Oukhanski, N., Grajcar, M., Il’ichev, E., & Meyer, H.-G.
Affiliations
Institute for Physical High Technology, P.O.B. 100239, D-07702 Jena, Germany
ORCID
Venue
Review of Scientific Instruments
Publisher
AIP Publishing
Published
2003-02-01
Volume
74
Issue
2
Pages
1145-1146
ISSN
  • 0034-6748 (ISSN-L)
  • 1089-7623
DOI
10.1063/1.1532539
OpenAlex
W2056730712
Cited by
52
References
0
Citations by year
2025: 1 · 2024: 1 · 2022: 2 · 2021: 5 · 2020: 3 · 2019: 1 · 2018: 2 · 2017: 2 · 2016: 3 · 2015: 2 · 2014: 3 · 2013: 1 · 2012: 4
FWCI
4.35
Type
journal article
Language
en
Open access
closed
Locations
Review of Scientific Instruments (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Radio Frequency Integrated Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Analog and Mixed-Signal Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Superconducting and THz Device Technology
Keywords
high electron mobility transistors, pseudomorphic HEMT, low noise amplifier, cryogenic electronics, noise temperature, low power consumption, three-stage amplifier, 1/f noise, low-frequency amplification

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