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Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
Abstract
The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was used to measure channel temperature with 1 μm spatial resolution, not possible using infrared techniques. Thermal resistance values were determined for four different device layouts with varying number of fingers, finger width, and spacing. The experimental thermal resistance was in fair agreement to that predicted by three-dimensional finite difference heat dissipation simulations. Uncertainties in thermal properties of this device system made simulation less reliable than experiment.
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Cited by
Superior Thermal Conductivity of Single-Layer Graphene
Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008) · Nano Letters · doi:10.1021/nl0731872 · Cited by 13,823
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
Sarua, A., Ji, H., Hilton, K. P., Wallis, D. J., Uren, M. J., Martin, T., & Kuball, M. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908874 · Cited by 304
Self-citationSarua, A., Ji, H., Kuball, M., Uren, M. J., Martin, T., Hilton, K. P., & Balmer, R. S. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.882274 · Cited by 267
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Metadata
- Authors
- Kuball, M., Rajasingam, S., Sarua, A., Uren, M. J., Martin, T., Hughes, B. T., Hilton, K. P., & Balmer, R. S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2003-01-06
- Volume
- 82
- Issue
- 1
- Pages
- 124-126
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1971865152
- Cited by
- 182
- References
- 0
- FWCI
- 8.85
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kuball, M., Rajasingam, S., Sarua, A., Uren, M. J., Martin, T., Hughes, B. T., Hilton, K. P., & Balmer, R. S. (2003). Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy. Applied Physics Letters. https://doi.org/10.1063/1.1534935
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