The DOI matches its Crossref record; 23 of the 23 references it cites were found in a registry or an index.
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
Abstract
The influence of a thermal boundary resistance (TBR) on temperature distribution in ungated AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography. The temperature distribution in operating AlGaN/GaN devices on SiC, sapphire, and Si substrates was used to determine values for the TBR by comparing experimental results to finite-difference thermal simulations. While the measured TBR of about 3.3 x 10-8W-1ldr m2ldr K for devices on SiC and Si substrates has a sizeable effect on the self-heating in devices, the TBR of up to 1.2 x 10-8W-1ldr m2ldr K plays an insignificant role in devices on sapphire substrates due to the low thermal conductivity of the substrate. The determined effective TBR was found to increase with temperature at the GaN/SiC interface from 3.3 x 10-8W-1ldr m2ldr K at 150degC to 6.5 x 3.3 x 10-8W-1ldr m2ldr K at 275degC, respectively. The contribution of a low-thermal-conductivity GaN layer at the GaN/substrate interface toward the effective TBR in devices and its temperature dependence are also discussed.
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Cites
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Cited by
Nanoscale thermal transport. II. 2003–2012
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., Keblinski, P., King, W. P., Mahan, G. D., Majumdar, A., et al. (2014) · Applied Physics Reviews · doi:10.1063/1.4832615 · Cited by 1,763
High Thermal Boundary Conductance across Bonded Heterogeneous GaN—SiC Interfaces
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Low Thermal Resistances at GaN–SiC Interfaces for HEMT Technology
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A Numerical Study on Comparing the Active and Passive Cooling of AlGaN/GaN HEMTs
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Thermal boundary conductance across metal-gallium nitride interfaces from 80 to 450 K
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Metadata
- Authors
- Sarua, A., Ji, H., Hilton, K. P., Wallis, D. J., Uren, M. J., Martin, T., & Kuball, M.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2007
- Volume
- 54
- Issue
- 12
- Pages
- 3152-3158
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2129795587
- Cited by
- 304
- References
- 23
- FWCI
- 6.66
- Type
- journal article
- Language
- en
- Open access
- closed
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