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Third-order nonlinearities in silicon at telecom wavelengths

Dinu, M., Quochi, F., Garcia, H.·2003·Applied Physics Letters

Abstract

The two-photon absorption coefficient and Kerr coefficient of bulk crystalline silicon are determined near the telecommunication wavelengths of 1.3 and 1.55 μm using femtosecond pulses and a balanced Z-scan technique. A phase shift sensitivity of the order of 1 mrad is achieved, enabling the accurate measurement of third-order nonlinear coefficients at fluences smaller than 100 μJ/cm2. From the two-photon absorption coefficient (β∼0.8 cm/GW) and the Kerr coefficient (n2∼4×10−14 cm2/W) at a wavelength λ=1.54 μm, a value F∼0.35 for the nonlinear figure of merit for all-optical switching is determined.

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Metadata

Authors
Dinu, M., Quochi, F., & Garcia, H.
Venue
Applied Physics Letters
Published
2003-05-05
Volume
82
Issue
18
Pages
2954-2956
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2070186312
Cited by
660
References
0
FWCI
17.16
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Third-order nonlinearities in silicon at telecom wavelengths. https://app.cochat.ai/papers/10.1063/1.1571665
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Dinu, M., Quochi, F., & Garcia, H. (2003). Third-order nonlinearities in silicon at telecom wavelengths. Applied Physics Letters. https://doi.org/10.1063/1.1571665

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