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Doping dependent NH3 sensing of indium oxide nanowires

Zhang, Daihua, Li, Chao, Liu, Xiaolei, Han, Song, Tang, Tao, Zhou, Chongwu·2003·Applied Physics Letters

Abstract

NH 3 gas sensing properties of In2O3 nanowires were carefully studied. Change of conductance in opposite directions was observed with different nanowire sensors. We suggest that this differential response is caused by various doping concentrations in the semiconducting In2O3 nanowires. In addition, we have also investigated a “gate-screening effect” exhibited in our nanowire chemical sensors at high NH3 concentrations, which is induced by adsorbed NH3 molecules working as charge traps. Both the doping-dependent response and the gate-screening effect will be especially valuable and helpful for understanding the detailed sensing mechanism of semiconducting metal oxide materials.

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Metadata

Authors
Zhang, D., Li, C., Liu, X., Han, S., Tang, T., & Zhou, C.
Venue
Applied Physics Letters
Published
2003-09-01
Volume
83
Issue
9
Pages
1845-1847
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1974236714
Cited by
180
References
0
FWCI
12.74
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Doping dependent NH3 sensing of indium oxide nanowires. https://app.cochat.ai/papers/10.1063/1.1604194
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Zhang, D., Li, C., Liu, X., Han, S., Tang, T., & Zhou, C. (2003). Doping dependent NH3 sensing of indium oxide nanowires. Applied Physics Letters. https://doi.org/10.1063/1.1604194

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