Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 814

The DOI matches its Crossref record.

ZnO nanowire field-effect transistor and oxygen sensing property

Open access
Fan, Zhiyong, Wang, Dawei, Chang, Pai-Chun, Tseng, Wei-Yu, Lu, Jia G.·2004·Applied Physics Letters

Abstract

Single-crystal ZnO nanowires are synthesized using a vapor trapping chemical vapor deposition method and configured as field-effect transistors. Electrical transport studies show n-type semiconducting behavior with a carrier concentration of ∼107cm−1 and an electron mobility of ∼17cm2∕Vs. The contact Schottky barrier between the Au/Ni electrode and nanowire is determined from the temperature dependence of the conductance. Thermionic emission is found to dominate the transport mechanism. The effect of oxygen adsorption on electron transport through the nanowires is investigated. The sensitivity to oxygen is demonstrated to be higher with smaller radii nanowires. Moreover, the oxygen detection sensitivity can be modulated by the gate voltage. These results indicate that ZnO holds high potential for nanoscale sensing applications.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1063/1.1836870

Cites

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cited by

See all 814

Metadata

Authors
Fan, Z., Wang, D., Chang, P.-C., Tseng, W.-Y., & Lu, J. G.
Venue
Applied Physics Letters
Published
2004-12-13
Volume
85
Issue
24
Pages
5923-5925
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2056046179
Cited by
814
References
0
FWCI
23.75
Type
journal article
Language
en
Open access
green

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: ZnO nanowire field-effect transistor and oxygen sensing property. https://app.cochat.ai/papers/10.1063/1.1836870
The paper
Fan, Z., Wang, D., Chang, P.-C., Tseng, W.-Y., & Lu, J. G. (2004). ZnO nanowire field-effect transistor and oxygen sensing property. Applied Physics Letters. https://doi.org/10.1063/1.1836870

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.