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Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition

Yun, Kwi Young, Noda, Minoru, Okuyama, Masanori·2003·Applied Physics Letters

Abstract

Ferroelectric BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/Si substrates in various oxygen pressures of 0.001–0.1 Torr at a temperature as low as 450 °C by pulsed-laser deposition. The crystallinity of the films was studied by x-ray diffraction. X-ray photoelectron spectroscopy showed that the films have a single phase of perovskite BiFeO3. The BiFeO3 thin films deposited at 0.01–0.1 Torr show good current-density–applied-voltage characteristics. It is obtained from polarization–electric-field characterization that 2Pr is about 71.3 μC/cm2 and 2Ec is 125 kV/cm. Stable current density and saturated ferroelectric hysteresis loop have been observed in BiFeO3 thin films.

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Metadata

Authors
Yun, K. Y., Noda, M., & Okuyama, M.
Venue
Applied Physics Letters
Published
2003-11-10
Volume
83
Issue
19
Pages
3981-3983
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1601768173
Cited by
225
References
0
FWCI
10.81
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition. https://app.cochat.ai/papers/10.1063/1.1626267
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Yun, K. Y., Noda, M., & Okuyama, M. (2003). Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition. Applied Physics Letters. https://doi.org/10.1063/1.1626267

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