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Cited by 1,306

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., Nakamura, S.·2004·Applied Physics Letters

Abstract

Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching process to roughen the surface, an n-side-up GaN-based LED with a hexagonal “conelike” surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED shows a twofold to threefold increase compared to that of an LED before surface roughening.

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Crossref · 10.1063/1.1645992

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Metadata

Authors
Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., & Nakamura, S.
Venue
Applied Physics Letters
Published
2004-02-09
Volume
84
Issue
6
Pages
855-857
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1979300756
Cited by
1,306
References
2
FWCI
43.55
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. https://app.cochat.ai/papers/10.1063/1.1645992
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Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., & Nakamura, S. (2004). Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Applied Physics Letters. https://doi.org/10.1063/1.1645992

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.