The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Abstract
Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching process to roughen the surface, an n-side-up GaN-based LED with a hexagonal “conelike” surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED shows a twofold to threefold increase compared to that of an LED before surface roughening.
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Citations
Cites
High-power AlGaInN flip-chip light-emitting diodes
Wierer, J. J., Steigerwald, D. A., Krames, M. R., O'Shea, J., Ludowise, M. J., Christenson, G. L., Shen, Y., Lowery, C., Martin, P. S., Subramanya, S. G., et al. (2001) · Applied Physics Letters · doi:10.1063/1.1374499 · Cited by 416
Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
Nishida, T., Saito, H., & Kobayashi, N. (2001) · Applied Physics Letters · doi:10.1063/1.1390485 · Cited by 312
Cited by
Review—Ionizing Radiation Damage Effects on GaN Devices
Pearton, S. J., Ren, F., Patrick, E., Law, M. E., & Polyakov, A. Y. (2016) · ECS Journal of Solid State Science and Technology · doi:10.1149/2.0251602jss · Cited by 384
Zang, Z., Zeng, X., Du, J., Wang, M., & Tang, X. (2016) · Optics Letters · doi:10.1364/ol.41.003463 · Cited by 359
Enhancement of Light Extraction from Light Emitting Diodes
Zhmakin, A. I. (2011) · Physics Reports · doi:10.1016/j.physrep.2010.11.001 · Cited by 312
Room-Temperature 2D Semiconductor Activated Vertical-Cavity Surface-Emitting Lasers
Shang, J., Cong, C., Wang, Z., Peimyoo, N., Wu, L., Zou, C., Chen, Y., Chin, X. Y., Wang, J., Soci, C., et al. (2017) · Nature Communications · doi:10.1038/s41467-017-00743-w · Cited by 145
Metadata
- Authors
- Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., & Nakamura, S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2004-02-09
- Volume
- 84
- Issue
- 6
- Pages
- 855-857
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1979300756
- Cited by
- 1,306
- References
- 2
- FWCI
- 43.55
- Type
- journal article
- Language
- en
- Open access
- closed
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- Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., & Nakamura, S. (2004). Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Applied Physics Letters. https://doi.org/10.1063/1.1645992
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