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Cited by 359

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Femtosecond laser direct writing of microholes on roughened ZnO for output power enhancement of InGaN light-emitting diodes

Zang, Zhigang, Zeng, Xiaofeng, Du, Jihe, Wang, Ming, Tang, Xiaosheng·2016·Optics Letters

Abstract

A significant enhancement of light extraction efficiency from InGaN light-emitting diodes (LEDs) with microhole arrays and roughened ZnO was experimentally demonstrated. The roughened ZnO was fabricated using an Ar and H2 plasma treatment of ZnO films pre-coated on a p-GaN layer. When followed by a femtosecond laser direct writing technique, a periodic array of microholes could be added to the surface. The diameter of the microhole was varied by changing the output power of the femtosecond laser. Compared to conventional LEDs on the same wafer, the output power of LEDs with roughened ZnOs and a microhole (diameter of 2 μm) array was increased by 58.4% when operated with an injection current of 220 mA. Moreover, it was found that LEDs fabricated with roughened ZnO and the microhole array had similar current–voltage (I–V) characteristics to those of conventional LEDs and no degrading effect was observed.

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Metadata

Authors
Zang, Z., Zeng, X., Du, J., Wang, M., & Tang, X.
Venue
Optics Letters
Published
2016-07-20
Volume
41
Issue
15
Pages
3463
ISSN
  • 0146-9592 (ISSN-L)
  • 1539-4794
OpenAlex
W2505556351
Cited by
359
References
10
FWCI
53.74
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Femtosecond laser direct writing of microholes on roughened ZnO for output power enhancement of InGaN light-emitting diodes. https://app.cochat.ai/papers/10.1364/ol.41.003463
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Zang, Z., Zeng, X., Du, J., Wang, M., & Tang, X. (2016). Femtosecond laser direct writing of microholes on roughened ZnO for output power enhancement of InGaN light-emitting diodes. Optics Letters. https://doi.org/10.1364/ol.41.003463

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