The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Resonant tunneling in semiconductor double barriers
Abstract
Resonant tunneling of electrons has been observed in double-barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces.
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Citations
Cites
Tunneling in a finite superlattice
Tsu, R., & Esaki, L. (1973) · Applied Physics Letters · doi:10.1063/1.1654509 · Cited by 2,371
Self-citation
Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Electronic structure of quantum dots
Reimann, S. M., & Manninen, M. (2002) · Reviews of Modern Physics · doi:10.1103/revmodphys.74.1283 · Cited by 1,380
Modulated Chemical Doping of Individual Carbon Nanotubes
Zhou, C., Kong, J., Yenilmez, E., & Dai, H. (2000) · Science · doi:10.1126/science.290.5496.1552 · Cited by 658
Hopping conduction in a "superlattice"
Tsu, R., & Döhler, G. (1975) · Physical Review B · doi:10.1103/physrevb.12.680 · Cited by 258
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Metadata
- Authors
- Chang, L. L., Esaki, L., & Tsu, R.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1974-06-15
- Volume
- 24
- Issue
- 12
- Pages
- 593-595
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2036407148
- Cited by
- 1,880
- References
- 1
- FWCI
- 7.07
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chang, L. L., Esaki, L., & Tsu, R. (1974). Resonant tunneling in semiconductor double barriers. Applied Physics Letters. https://doi.org/10.1063/1.1655067
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