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General Relationship for the Thermal Oxidation of Silicon
Abstract
The thermal-oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 Å) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico-chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space-charge effects on the initial phase of oxidation.
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Cited by
Opeka, M. M., Talmy, I. G., & Zaykoski, J. A. (2004) · Journal of Materials Science · doi:10.1023/b:jmsc.0000041686.21788.77 · Cited by 965
Saunders, S. R. J., Monteiro, M., & Rizzo, F. (2008) · Progress in Materials Science · doi:10.1016/j.pmatsci.2007.11.001 · Cited by 675
Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
Yamamoto, M., Dutta, S., Aikawa, S., Nakaharai, S., Wakabayashi, K., Fuhrer, M. S., Ueno, K., & Tsukagoshi, K. (2015) · Nano Letters · doi:10.1021/nl5049753 · Cited by 258
A Calorimeter for Measurements of Multilayer Insulation at Variable Cold Temperature
Funke, T., & Haberstroh, C. (2015) · Physics Procedia · doi:10.1016/j.phpro.2015.06.201 · Cited by 11
Metadata
- Authors
- Deal, B. E., & Grove, A. S.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1965-12-01
- Volume
- 36
- Issue
- 12
- Pages
- 3770-3778
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2093914900
- Cited by
- 3,470
- References
- 0
- FWCI
- 7.65
- Type
- journal article
- Language
- en
- Open access
- closed
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- Deal, B. E., & Grove, A. S. (1965). General Relationship for the Thermal Oxidation of Silicon. Journal of Applied Physics. https://doi.org/10.1063/1.1713945
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