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High-mobility field-effect transistors based on transition metal dichalcogenides
Open accessAbstract
We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.
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Cited by
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Photoluminescence from Chemically Exfoliated MoS 2
Eda, G., Yamaguchi, H., Voiry, D., Fujita, T., Chen, M., & Chhowalla, M. (2011) · Nano Letters · doi:10.1021/nl201874w · Cited by 3,896
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Furchi, M. M., Pospischil, A., Libisch, F., Burgdörfer, J., & Mueller, T. (2014) · Nano Letters · doi:10.1021/nl501962c · Cited by 1,085
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Metadata
- Authors
- Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R., & Bucher, E.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2004-04-26
- Volume
- 84
- Issue
- 17
- Pages
- 3301-3303
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1973667087
- Cited by
- 595
- References
- 0
- FWCI
- 2.08
- Type
- journal article
- Language
- en
- Open access
- green
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- Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R., & Bucher, E. (2004). High-mobility field-effect transistors based on transition metal dichalcogenides. Applied Physics Letters. https://doi.org/10.1063/1.1723695
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