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High-mobility field-effect transistors based on transition metal dichalcogenides

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Podzorov, V., Gershenson, M. E., Kloc, Ch., Zeis, R., Bucher, E.·2004·Applied Physics Letters

Abstract

We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.

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Metadata

Authors
Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R., & Bucher, E.
Venue
Applied Physics Letters
Published
2004-04-26
Volume
84
Issue
17
Pages
3301-3303
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1973667087
Cited by
595
References
0
FWCI
2.08
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: High-mobility field-effect transistors based on transition metal dichalcogenides. https://app.cochat.ai/papers/10.1063/1.1723695
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Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R., & Bucher, E. (2004). High-mobility field-effect transistors based on transition metal dichalcogenides. Applied Physics Letters. https://doi.org/10.1063/1.1723695

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.