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Tunneling Through Thin Insulating Layers
Abstract
The resistance of thin aluminum-oxide films has been measured as a function of the voltage across the film and of the film thickness as calculated from its capacitance. All films showed ohmic behavior at low voltages, and exponential rise of current at higher voltages, in qualitative agreement with R. Holm's theoretical calculations for tunneling through thin vacuum layers. However, the resistance was several orders of magnitude lower than either the bulk value for Al2O3 or the calculated value for tunneling through vacuum. By making use of an effective mass in the oxide equal to about19 of the electron mass, the calculated values for tunneling can be brought into line with the experimental results.
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Citations
Cited by
Simmons, J. G. (1963) · Journal of Applied Physics · doi:10.1063/1.1702682 · Cited by 4,200
Nonohmic Properties of Zinc Oxide Ceramics
Matsuoka, M. (1971) · Japanese Journal of Applied Physics · doi:10.1143/jjap.10.736 · Cited by 1,161
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Single-molecule quantum tunnelling sensors
Yi, L., Yang, Y., Zeng, B.-F., Liu, X., Edel, J. B., Ivanov, A. P., & Tang, L. (2026) · Chemical Society Reviews · doi:10.1039/d4cs00375f · Cited by 12
Metadata
- Authors
- Fisher, J. C., & Giaever, I.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1961-02-01
- Volume
- 32
- Issue
- 2
- Pages
- 172-177
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2001716999
- Cited by
- 377
- References
- 0
- FWCI
- 48.23
- Type
- journal article
- Language
- en
- Open access
- closed
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