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Cited by 731Semiconductor materials and devicesAdvanced Memory and Neural ComputingPhase-change materials and chalcogenides

Electrical phenomena in amorphous oxide films

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Dearnaley, G, Stoneham, A M, Morgan, D V·1970·Reports on Progress in Physics
DOI 10.1088/0034-4885/33/3/306
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Abstract

Thin layers of insulators, from 100 Å to 20 000 Å thick, have a number of interesting electrical properties. These properties include forming, which is a profound and essentially permanent change produced by an electrical field, and, after forming, differential negative resistance together with switching and memory phenomena. Electroluminescence and electron emission also occur. These features are shown by most amorphous or microcrystalline insulators of the appropriate thickness, and are particularly clearly shown by the oxides, such as Al 2 O 3 , Ta 2 O 5 and SiO. In our review we survey the observed properties of metal-insulator-metal devices involving such insulating layers, and discuss the mechanisms which have been proposed for their operation. Further, since the unusual properties may be technologically important, we outline some of the possible uses of these devices and the relevance of the phenomena to the mechanism of corrosion of certain metals.

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  • The forming process can be explained by formation of metallic filaments through the insulating layer from the metal end making electrical contacts through the bulk.

    “The forming process can be explained by considering the formation of metallic filaments through the insulating layer arising from the metal end making electrical contacts through the bulk of the material.This is known as the 'polyfilamentary model of conduction ' [41,42].”

    From Polarity-dependent memory switching effects in the Ti/Cd<sub>x</sub>Pb<sub>1-x</sub>S/Ag system (1995) · cites this paper as [42]

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Research works printed but not linked: 24

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Cited by

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Authors
Dearnaley, G., Stoneham, A. M., & Morgan, D. V.
Affiliations
University of Leeds (GB)
Venue
Reports on Progress in Physics
Publisher
IOP Publishing
Published
1970-09-01
Volume
33
Issue
3
Pages
1129-1191
ISSN
0034-4885 (ISSN-L)
DOI
10.1088/0034-4885/33/3/306
OpenAlex
W2122193720
Cited by
731
References
1
Citations by year
2026: 3 · 2025: 13 · 2024: 15 · 2023: 12 · 2022: 22 · 2021: 17 · 2020: 14 · 2019: 27 · 2018: 20 · 2017: 25 · 2016: 31 · 2015: 20 · 2014: 35 · 2013: 33 · 2012: 34
FWCI
16.50
Type
journal article
Language
en
Open access
Locations
  • Reports on Progress in Physics (publishedVersion)
  • UCL Discovery (University College London) (submittedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Keywords
amorphous oxide films, thin insulating films, negative resistance, switching, memory effects, electroluminescence, electron emission, metal-insulator-metal devices, alumina, tantalum pentoxide, silicon monoxide, corrosion mechanism

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