The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Current-voltage characteristics and parameter retrieval of semiconducting nanowires
Abstract
Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias. In contrast to the conventional Schottky diode, the reverse current in the nano-Schottky barrier structure is not negligible and the current is largely tunneling rather than thermionic. Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3 nanowires.
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Cites
Doping and Electrical Transport in Silicon Nanowires
Cui, Y., Duan, X., Hu, J., & Lieber, C. M. (2000) · The Journal of Physical Chemistry B · doi:10.1021/jp0009305 · Cited by 950
ZnO nanowire field-effect transistor and oxygen sensing property
Fan, Z., Wang, D., Chang, P.-C., Tseng, W.-Y., & Lu, J. G. (2004) · Applied Physics Letters · doi:10.1063/1.1836870 · Cited by 814
Chung, S.-W., Yu, J.-Y., & Heath, J. R. (2000) · Applied Physics Letters · doi:10.1063/1.126257 · Cited by 377
Transport Properties of Bi2S3 and the Ternary Bismuth Sulfides KBi6.33S10 and K2Bi8S13
Chen, B., Uher, C., Iordanidis, L., & Kanatzidis, M. G. (1997) · Chemistry of Materials · doi:10.1021/cm970033m · Cited by 195
Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes
Fan, Z., & Lu, J. G. (2005) · Applied Physics Letters · doi:10.1063/1.1851621 · Cited by 142
Electrical transport in boron nanowires
Wang, D., Lu, J. G., Otten, C. J., & Buhro, W. E. (2003) · Applied Physics Letters · doi:10.1063/1.1630380 · Cited by 59
Cited by
Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers
Zhang, W., Chiu, M.-H., Chen, C.-H., Chen, W., Li, L.-J., & Wee, A. T. S. (2014) · ACS Nano · doi:10.1021/nn503521c · Cited by 438
Ultrafast photocurrents and THz generation in single InAs‐nanowires
Erhard, N., Seifert, P., Prechtel, L., Hertenberger, S., Karl, H., Abstreiter, G., Koblmüller, G., & Holleitner, A. W. (2013) · Annalen der Physik · doi:10.1002/andp.201200181 · Cited by 30
Metadata
- Authors
- Zhang, Z. Y., Jin, C. H., Liang, X. L., Chen, Q., & Peng, L.-M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2006-02-13
- Volume
- 88
- Issue
- 7
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1964908437
- Cited by
- 277
- References
- 6
- FWCI
- 15.60
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhang, Z. Y., Jin, C. H., Liang, X. L., Chen, Q., & Peng, L.-M. (2006). Current-voltage characteristics and parameter retrieval of semiconducting nanowires. Applied Physics Letters. https://doi.org/10.1063/1.2177362
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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