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Cited by 359

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Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

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Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., Tokura, Y.·2005·Applied Physics Letters
DOI 10.1063/1.1845598
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Abstract

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO3 (SRO) film epitaxially grown on SrTi0.99Nb0.01O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current–voltage (I–V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n-type semiconductor (Nb:STO). A hysteresis appears in the I–V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1μs–10ms duration.

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Metadata

Authors
Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., & Tokura, Y.
Venue
Applied Physics Letters
Publisher
AIP Publishing
Published
2004-12-23
Volume
86
Issue
1
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
DOI
10.1063/1.1845598
OpenAlex
W2107715677
Cited by
359
References
0
FWCI
9.79
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3. https://app.cochat.ai/papers/10.1063/1.1845598
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Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., & Tokura, Y. (2005). Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3. Applied Physics Letters. https://doi.org/10.1063/1.1845598

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.