High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

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Reproducible resistance switching in polycrystalline NiO films

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Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., & Tokura, Y. (2004) · Applied Physics Letters · doi:10.1063/1.1845598 · Cited by 359 · see citing works

Identification of a determining parameter for resistive switching of TiO2 thin films

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Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

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Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model

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Study on the resistive switching time of TiO2 thin films

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Resistive switching in transition metal oxides

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Metal–Oxide RRAM

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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

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Emerging memories: resistive switching mechanisms and current status

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Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

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Resistive Random Access Memory (ReRAM) Based on Metal Oxides

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Sub-nanosecond switching of a tantalum oxide memristor

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Recommended Methods to Study Resistive Switching Devices

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High switching endurance in TaOx memristive devices

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Polymer and Organic Nonvolatile Memory Devices

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Resistive switching phenomena: A review of statistical physics approaches

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Phase-transition driven memristive system

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Multibit memory operation of metal-oxide bi-layer memristors

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Adaptive oxide electronics: A review

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Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

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Oxide-based RRAM materials for neuromorphic computing

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Polymer memristor for information storage and neuromorphic applications

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An Emergent Change of Phase for Electronics

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Standards for the Characterization of Endurance in Resistive Switching Devices

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Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

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Nanoscale resistive memory with intrinsic diode characteristics and long endurance

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Device and materials requirements for neuromorphic computing

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Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics.

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Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

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Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers

Yu, S., Gao, B., Dai, H., Sun, B., Liu, L., Liu, X., Han, R., Kang, J., & Yu, B. (2009) · Electrochemical and Solid-State Letters · doi:10.1149/1.3267050 · Cited by 137 · see citing works

Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

Cheng, C., Yeh, F.-S., & Chin, A. (2010) · Advanced Materials · doi:10.1002/adma.201002946 · Cited by 136 · see citing works

Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

Ye, C., Wu, J., He, G., Zhang, J., Deng, T., Pin, H., & Wang, H. (2015) · Journal of Material Science and Technology · doi:10.1016/j.jmst.2015.10.018 · Cited by 132 · see citing works

Understanding the trade-offs in multi-level cell ReRAM memory design

Xu, C., Niu, D., Muralimanohar, N., Jouppi, N. P., & Xie, Y. (2013) · ACM/IEEE Design Automation Conference (DAC) · doi:10.1145/2463209.2488867 · Cited by 129 · see citing works

A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review

Acharyya, D., Hazra, A., & Bhattacharyya, P. (2014) · Microelectronics Reliability · doi:10.1016/j.microrel.2013.11.013 · Cited by 128 · see citing works

Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

Ninomiya, T., Wei, Z., Muraoka, S., Yasuhara, R., Katayama, K., & Takagi, T. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2248157 · Cited by 123 · see citing works

Memristor Kinetics and Diffusion Characteristics for Mixed Anionic‐Electronic SrTiO 3‐δ Bits: The Memristor‐Based Cottrell Analysis Connecting Material to Device Performance

Messerschmitt, F., Kubicek, M., Schweiger, S., & Rupp, J. L. M. (2014) · Advanced Functional Materials · doi:10.1002/adfm.201402286 · Cited by 115 · see citing works

Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation

Terai, M., Sakotsubo, Y., Kotsuji, S., & Hada, H. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2009.2039021 · Cited by 106 · see citing works

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Zhang, W., Kong, J., Cao, Z., Li, A., Wang, L.-G., Zhu, L. S., Li, X., Cao, Y., & Wu, D. (2017) · Nanoscale Research Letters · doi:10.1186/s11671-017-2164-z · Cited by 105 · see citing works

Resistive Switching in All‐Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Qin, Q. H., Äkäslompolo, L., Tuomisto, N., Yao, L., Majumdar, S., Vijayakumar, J., Casiraghi, A., Inkinen, S., Chen, B., Zugarramurdi, A., et al. (2016) · Advanced Materials · doi:10.1002/adma.201504519 · Cited by 105 · see citing works

Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

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Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

Lin, Y., Zeng, F., Tang, S., Liu, H. Y., Chen, C., Gao, S., Wang, Y. G., & Pan, F. (2013) · Journal of Applied Physics · doi:10.1063/1.4791695 · Cited by 99 · see citing works

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

Sun, B., Liu, Y. X., Liu, L. F., Xu, N., Ying-Ming, W. A. N. G., Liu, X. Y., Han, R. Q., & Kang, J. (2009) · Journal of Applied Physics · doi:10.1063/1.3055414 · Cited by 97 · see citing works

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

Khan, R., Rehman, N. U., Iqbal, S., Abdullaev, S. S., & Aldosari, H. M. (2023) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.3c01323 · Cited by 93 · see citing works

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

Yoon, J., Choi, H., Lee, D., Park, J., Lee, J., Seong, D.-J., Ju, Y., Chang, M., Jung, S., & Hwang, H. (2009) · IEEE Electron Device Letters · doi:10.1109/led.2009.2015687 · Cited by 94 · see citing works

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

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Collective Motion of Conducting Filaments in Pt/n‐Type TiO2/p‐Type NiO/Pt Stacked Resistance Switching Memory

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Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2–Pt Device via Strong Metal Support Interaction

Jang, M. H., Agarwal, R., Nukala, P., Choi, D., Johnson, A. T. C., Chen, I., & Agarwal, R. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b02951 · Cited by 87 · see citing works

Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High‐Density Resistive Switching Memory

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Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

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Memristive devices in computing system

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Realization of forming-free ZnO-based resistive switching memory by controlling film thickness

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Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

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All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

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To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time

Фадеев, А. В., & Rudenko, K. V. (2021) · Russian Microelectronics · doi:10.1134/s1063739721050024 · Cited by 75 · see citing works

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

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Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

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Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2

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Customized binary and multi-level HfO2−x-based memristors tuned by oxidation conditions

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Gasistor: A memristor based gas-triggered switch and gas sensor with memory

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HfO x /AlO y Superlattice‐Like Memristive Synapse

Wang, C., Mao, G., Huang, M., Huang, E., Zhang, Z., Yuan, J., Cheng, W., Xue, K., Wang, X., & Miao, X. (2022) · Advanced Science · doi:10.1002/advs.202201446 · Cited by 69 · see citing works

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

Hsu, C.-H., Fan, Y., & Liu, P. (2013) · Applied Physics Letters · doi:10.1063/1.4792316 · Cited by 67 · see citing works

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

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The anodization voltage influence on the properties of TiO2nanotubes grown by electrochemical oxidation

Alivov, Y., Pandikunta, M., Nikishin, S. A., & Fan, Z. (2009) · Nanotechnology · doi:10.1088/0957-4484/20/22/225602 · Cited by 60 · see citing works

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2Resistance Switching Using Liquid Electrolyte Contacts

Tang, K., Meng, A. C., Hui, F., Shi, Y., Petach, T. A., Hitzman, C. J., Koh, A. L., Goldhaber‐Gordon, D., Lanza, M., & McIntyre, P. C. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b01460 · Cited by 62 · see citing works

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

Kwak, J. S., Do, Y. H., Bae, Y. C., Im, H. S., Yoo, J. H., Sung, M. G., Hwang, Y. T., & Hong, J. P. (2010) · Applied Physics Letters · doi:10.1063/1.3442499 · Cited by 57 · see citing works

Modeling for multilevel switching in oxide-based bipolar resistive memory

Hur, J., Kim, K. M., Chang, M., Lee, S. R., Lee, D., Lee, C. B., Lee, M., Kim, Y.-B., Kim, C., & Chung, U. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/22/225702 · Cited by 57 · see citing works

Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses

Wang, C., Wu, H., Gao, B., Wu, W., Dai, L., Li, X., & Qian, H. (2017) · Advanced Electronic Materials · doi:10.1002/aelm.201700263 · Cited by 57 · see citing works

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble, G. U., Patil, A. P., Kamat, R. K., Kim, J. H., & Dongale, T. D. (2023) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.3c00062 · Cited by 54 · see citing works

Resistance switching properties of molybdenum oxide films

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Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

Shuai, Y., Ou, X., Luo, W., Mücklich, A., Bürger, D., Zhou, S., Wu, C., Chen, Y., Zhang, W., Helm, M., et al. (2013) · Scientific Reports · doi:10.1038/srep02208 · Cited by 54 · see citing works

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Gao, B., Chen, B., Zhang, F., Liu, L., Liu, X., Kang, J., Yu, H. Y., & Yu, B. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2245508 · Cited by 54 · see citing works

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Wang, G., Li, C., Chen, Y., Xia, Y., Wu, D., & Xu, Q. (2016) · Scientific Reports · doi:10.1038/srep36953 · Cited by 54 · see citing works

Control the switching mode of Pt/HfO2/TiN RRAM devices by tuning the crystalline state of TiN electrode

Sun, C., Lu, S., Jin, F., Mo, W., Song, J., & Dong, K. (2018) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2018.03.320 · Cited by 52 · see citing works

A Winograd-Based Integrated Photonics Accelerator for Convolutional Neural Networks

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Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices

Hermes, C., Wimmer, M., Menzel, S., Fleck, K., Bruns, G., Salinga, M., Böttger, U., Bruchhaus, R., Schmitz-Kempen, T., Wuttig, M., et al. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2156377 · Cited by 51 · see citing works

Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device

Kim, I., Siddik, M., Shin, J., Biju, K. P., Jung, S., & Hwang, H. (2011) · Applied Physics Letters · doi:10.1063/1.3617426 · Cited by 49 · see citing works

Capacity based nondestructive readout for complementary resistive switches

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$${ SIM}^2{ RRAM}$$ S I M 2 R R A M : a physical model for RRAM devices simulation

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Ultrafast resistive switching in SrTiO3:Nb single crystal

Zhang, X., Yu, Q. X., Yao, Y., & Li, X. G. (2010) · Applied Physics Letters · doi:10.1063/1.3524216 · Cited by 48 · see citing works

Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

Herderick, E. D., Reddy, K. M., Sample, R. N., Draskovic, T. I., & Padture, N. P. (2009) · Applied Physics Letters · doi:10.1063/1.3263733 · Cited by 48 · see citing works

Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics

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Enhanced resistance switching stability of transparent ITO/TiO 2 /ITO sandwiches

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Oxygen vacancy filament formation in TiO2: A kinetic Monte Carlo study

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Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films

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Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

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