The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Conductivity switching characteristics and reset currents in NiO films
Abstract
Conductivity switching phenomena controlled by external voltages have been investigated for various NiO films deposited by dc reactive sputtering methods. Pt∕NiO∕Pt capacitor structures with top electrodes of different diameters have showed increasing off-state current with the diameter of a top electrode and nearly the same on-state current independent of the diameter. Local conductivity switching behaviors have been observed in a series structure consisting of two Pt∕NiO∕Pt capacitors with different resistance values. By reasoning out conductivity switching mechanisms from the switching characteristics and introducing multilayers consisting of NiO layers with different resistance values, we have reduced the reset current by two orders of magnitude.
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Cites
Switching phenomena in titanium oxide thin films
Argall, F. (1968) · Solid-State Electronics · doi:10.1016/0038-1101(68)90092-0 · Cited by 308
Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
Kim, D. C., Seo, S., Ahn, S. E., Suh, D.-S., Lee, M. J., Park, B.-H., Yoo, I. K., Baek, I. G., Kim, H.-J., Yim, E. K., et al. (2006) · Applied Physics Letters · doi:10.1063/1.2204649 · Cited by 526
Self-citationA Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
Lee, M. ‐., Seo, S., Kim, D. ‐., Ahn, S. ‐., Seo, D. H., Yoo, I. ‐., Baek, I. ‐., Kim, D. ‐., Byun, I. ‐., Kim, S. ‐., et al. (2007) · Advanced Materials · doi:10.1002/adma.200601025 · Cited by 234
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Metadata
- Authors
- Seo, S., Lee, M. J., Seo, D. H., Choi, S. K., Suh, D.-S., Joung, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., & Park, B. H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-02-25
- Volume
- 86
- Issue
- 9
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2032520491
- Cited by
- 160
- References
- 1
- FWCI
- 12.71
- Type
- journal article
- Language
- en
- Open access
- closed
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- Seo, S., Lee, M. J., Seo, D. H., Choi, S. K., Suh, D.-S., Joung, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., & Park, B. H. (2005). Conductivity switching characteristics and reset currents in NiO films. Applied Physics Letters. https://doi.org/10.1063/1.1872217
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