The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
Abstract
Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.
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Citations
Cites
Reproducible resistance switching in polycrystalline NiO films
Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1831560 · Cited by 933
Self-citationElectrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition
Fors, R., Khartsev, S. I., & Grishin, A. M. (2005) · Physical Review B · doi:10.1103/physrevb.71.045305 · Cited by 172
Conductivity switching characteristics and reset currents in NiO films
Seo, S., Lee, M. J., Seo, D. H., Choi, S. K., Suh, D.-S., Joung, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., et al. (2005) · Applied Physics Letters · doi:10.1063/1.1872217 · Cited by 160
Self-citationA new filamentary model for voltage formed amorphous oxide films
Ralph, J. E., & Woodcock, J. M. (1972) · Journal of Non-Crystalline Solids · doi:10.1016/0022-3093(72)90025-7 · Cited by 65
Research works printed but not linked: 5
- Tech. Dig. - Int. Electron Devices Meet., 2004, 587
- 2001, Appl. Phys. Lett., 78, 492, 10.1063/1.1342214 · doi:10.1063/1.1342214
- 1995, J. Phys. D, 28, 2398, 10.1088/0022-3727/28/12/002 · doi:10.1088/0022-3727/28/12/002
- 1998, Phys. Rev. B, 57, 13550, 10.1103/PhysRevB.57.13550 · doi:10.1103/physrevb.57.13550
- 2003, J. Vac. Sci. Technol. B, 21, 2599, 10.1116/1.1621655 · doi:10.1116/1.1621655
Cited by
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
Chang, W.-Y., Lai, Y.-C., Wu, T.-B., Wang, S.-F., Chen, F., & Tsai, M.-J. (2008) · Applied Physics Letters · doi:10.1063/1.2834852 · Cited by 465
Memristor‐Based Neuromorphic Chips
Duan, X., Cao, Z., Gao, K., Yan, W., Sun, S., Zhou, G., Wu, Z., Ren, F., & Sun, B. (2024) · Advanced Materials · doi:10.1002/adma.202310704 · Cited by 432
Metadata
- Authors
- Kim, D. C., Seo, S., Ahn, S. E., Suh, D.-S., Lee, M. J., Park, B.-H., Yoo, I. K., Baek, I. G., Kim, H.-J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U.-I., Moon, J. T., & Ryu, B. I.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2006-05-15
- Volume
- 88
- Issue
- 20
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2003015355
- Cited by
- 526
- References
- 5
- FWCI
- 39.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Kim, D. C., Seo, S., Ahn, S. E., Suh, D.-S., Lee, M. J., Park, B.-H., Yoo, I. K., Baek, I. G., Kim, H.-J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U.-I., Moon, J. T., & Ryu, B. I. (2006). Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Applied Physics Letters. https://doi.org/10.1063/1.2204649
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
