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Gate-refreshable nanowire chemical sensors
Abstract
ZnO nanowire field effect transistors were implemented as highly sensitive chemical sensors for detection of NO2 and NH3 at room temperature. Due to a Debye screening length comparable to the nanowire diameter, the electric field applied over the back gate electrode was found to significantly affect the sensitivity as it modulates the carrier concentration. A strong negative field was utilized to refresh the sensors by an electrodesorption mechanism. In addition, different chemisorbed species could be distinguished from the “refresh” threshold voltage and the temporal response of the conductance. These results demonstrated a refreshable field effect sensor with a potential gas identification function.
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Cited by
Supersensitive, Fast‐Response Nanowire Sensors by Using Schottky Contacts
Hu, Y., Zhou, J., Yeh, P., Li, Z., Wei, T., & Wang, Z. L. (2010) · Advanced Materials · doi:10.1002/adma.201000278 · Cited by 346
3D Arrays of 1024‐Pixel Image Sensors based on Lead Halide Perovskite Nanowires
Gu, L., Tavakoli, M. M., Zhang, D., Zhang, Q., Waleed, A., Xiao, Y., Tsui, K., Lin, Y., Liao, L., Wang, J., et al. (2016) · Advanced Materials · doi:10.1002/adma.201601603 · Cited by 300
Self-citationChemical sensing with ZnO nanowire field-effect transistor
Fan, Z., & Lu, J. G. (2006) · IEEE Transactions On Nanotechnology · doi:10.1109/tnano.2006.877428 · Cited by 106
Self-citation
Metadata
- Authors
- Fan, Z., & Lu, J. G.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-03-17
- Volume
- 86
- Issue
- 12
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2071340400
- Cited by
- 435
- References
- 0
- FWCI
- 38.45
- Type
- journal article
- Language
- en
- Open access
- closed
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- Fan, Z., & Lu, J. G. (2005). Gate-refreshable nanowire chemical sensors. Applied Physics Letters. https://doi.org/10.1063/1.1883715
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