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Silicon Diffused-Element Piezoresistive Diaphragms
Abstract
The properties of a pressure transducer consisting of a single-crystal silicon diaphragm having stress-sensitive piezoresistive regions formed by the localized diffusion of impurities have been theoretically and experimentally investigated. The longitudinal and transverse piezoresistance effects are discussed and the results are applied to the stress pattern of a deformed diaphragm. The conditions under which the stress in the diaphragm varies linearly with applied pressure are discussed and good agreement between the predicted and measured sensitivity is found in both the linear and nonlinear cases.
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Citations
Cited by
Giant piezoresistance effect in silicon nanowires
He, R., & Yang, P. (2006) · Nature Nanotechnology · doi:10.1038/nnano.2006.53 · Cited by 722
Pressure sensitivity in anisotropically etched thin-diaphragm pressure sensors
Clark, S. K., & Wise, K. D. (1979) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1979.19792 · Cited by 301
A Path Beyond Metal and Silicon:Polymer/Nanomaterial Composites for Stretchable Strain Sensors
Qiu, A., Li, P., Yang, Z., Yao, Y., Lee, I., & Ma, J. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201806306 · Cited by 237
Metadata
- Authors
- Tufte, O. N., Chapman, P. W., & Long, D.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1962-11-01
- Volume
- 33
- Issue
- 11
- Pages
- 3322-3327
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1974302073
- Cited by
- 267
- References
- 0
- FWCI
- 1.70
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Silicon Diffused-Element Piezoresistive Diaphragms. https://app.cochat.ai/papers/10.1063/1.1931164
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- Tufte, O. N., Chapman, P. W., & Long, D. (1962). Silicon Diffused-Element Piezoresistive Diaphragms. Journal of Applied Physics. https://doi.org/10.1063/1.1931164
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