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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
Open accessAbstract
We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9μm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed.
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Cites
Single-nanowire electrically driven lasers
Duan, X., Huang, Y., Agarwal, R., & Lieber, C. M. (2003) · Nature · doi:10.1038/nature01353 · Cited by 2,447
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Control of InAs Nanowire Growth Directions on Si
Tomioka, K., Motohisa, J., Hara, S., & Fukui, T. (2008) · Nano Letters · doi:10.1021/nl802398j · Cited by 356
Self-citationDick, K. A. (2008) · Progress in Crystal Growth and Characterization of Materials · doi:10.1016/j.pcrysgrow.2008.09.001 · Cited by 297
Metadata
- Authors
- Noborisaka, J., Motohisa, J., & Fukui, T.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-05-16
- Volume
- 86
- Issue
- 21
- Pages
- 213102
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2080617920
- Cited by
- 251
- References
- 1
- FWCI
- 11.56
- Type
- journal article
- Language
- en
- Open access
- green
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- Noborisaka, J., Motohisa, J., & Fukui, T. (2005). Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy. Applied Physics Letters. https://doi.org/10.1063/1.1935038
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