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Identification of a determining parameter for resistive switching of TiO2 thin films
Abstract
Electric-pulse-induced resistive switching of 43nm thick TiO2 thin films grown by metalorganic chemical vapor deposition was studied by current-voltage (I-V) and constant voltage-time measurements. The resistance ratio between the two stable states of the film constitutes approximately 1000. The allowed current level and voltage step width during the sweep mode I-V measurements influenced switching parameters, such as the switching voltage, time before switching, and resistance values. However, it was clearly observed that the power imparted to the film controlled mainly switching. The required power for successful switching was almost invariant irrespective of other measurement variables.
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Citations
Cited by
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Self-citationKim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
Self-citationResistive switching memory effect of ZrO2 films with Zr+ implanted
Liu, Q., Guan, W., Long, S., Jia, R., Liu, M., & Chen, J. (2008) · Applied Physics Letters · doi:10.1063/1.2832660 · Cited by 280
Metadata
- Authors
- Rohde, C., Choi, B. J., Jeong, D. S., Choi, S., Zhao, J.-S., & Hwang, C. S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-06-23
- Volume
- 86
- Issue
- 26
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2027299565
- Cited by
- 333
- References
- 0
- FWCI
- 20.34
- Type
- journal article
- Language
- en
- Open access
- closed
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- Rohde, C., Choi, B. J., Jeong, D. S., Choi, S., Zhao, J.-S., & Hwang, C. S. (2005). Identification of a determining parameter for resistive switching of TiO2 thin films. Applied Physics Letters. https://doi.org/10.1063/1.1968416
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