The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Resistive switching memory effect of ZrO2 films with Zr+ implanted
Abstract
The Au∕Cr∕Zr+-implanted-ZrO2∕n+-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.
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Cites
Lampert, M. A., & Mark, P. (1970) · CERN Document Server (European Organization for Nuclear Research) · Cited by 2,786
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.2001146 · Cited by 1,150
Reproducible switching effect in thin oxide films for memory applications
Beck, A., Bednorz, J. G., Gerber, C., Rossel, C., & Widmer, D. (2000) · Applied Physics Letters · doi:10.1063/1.126902 · Cited by 1,122
Reproducible resistance switching in polycrystalline NiO films
Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1831560 · Cited by 933
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
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Electrical observations of filamentary conductions for the resistive memory switching in NiO films
Kim, D. C., Seo, S., Ahn, S. E., Suh, D.-S., Lee, M. J., Park, B.-H., Yoo, I. K., Baek, I. G., Kim, H.-J., Yim, E. K., et al. (2006) · Applied Physics Letters · doi:10.1063/1.2204649 · Cited by 526
Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
Schindler, C., Thermadam, S. C. P., Waser, R., & Kozicki, M. N. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.904402 · Cited by 376
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Identification of a determining parameter for resistive switching of TiO2 thin films
Rohde, C., Choi, B. J., Jeong, D. S., Choi, S., Zhao, J.-S., & Hwang, C. S. (2005) · Applied Physics Letters · doi:10.1063/1.1968416 · Cited by 333
Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications
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Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Lim, E., & Ismail, R. (2015) · Electronics · doi:10.3390/electronics4030586 · Cited by 829
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Self-citationGrowth, dielectric properties, and memory device applications of ZrO2 thin films
Panda, D., & Tseng, T.-Y. (2013) · Thin Solid Films · doi:10.1016/j.tsf.2013.01.004 · Cited by 300
Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
Kim, K., Park, S., Hu, S. M., Song, J., Lim, W., Jeong, Y., Kim, J., Lee, S., Kwak, J. Y., Park, J., et al. (2020) · NPG Asia Materials · doi:10.1038/s41427-020-00261-0 · Cited by 28
Metadata
- Authors
- Liu, Q., Guan, W., Long, S., Jia, R., Liu, M., & Chen, J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2008-01-07
- Volume
- 92
- Issue
- 1
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1506538299
- Cited by
- 280
- References
- 14
- FWCI
- 13.45
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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