The DOI matches its Crossref record.
Low-voltage polymer field-effect transistors for nonvolatile memories
Open accessAbstract
We demonstrate organic nonvolatile memories based on transistors, made from spin-coated polymers, that have programming voltages of 15V and good data retention capabilities. The low-voltage programmable ferroelectric field-effect transistors were obtained by an optimized ferroelectric polymer deposition method using cyclohexanone as a solvent from which films can be obtained that are thin, smooth and defect free. The data retention characteristics were measured for 3h under constant read conditions. Extrapolation predicts that the data retention capability exceeds 10years.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Choi, H., Hong, S., Sung, T.-H., & No, K. (2011) · Applied Physics Letters · doi:10.1063/1.3632042 · Cited by 10
Metadata
- Authors
- Naber, R. C. G., de Boer, B., Blom, P. W. M., & de Leeuw, D. M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-11-10
- Volume
- 87
- Issue
- 20
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2131871580
- Cited by
- 190
- References
- 0
- FWCI
- 9.22
- Type
- journal article
- Language
- en
- Open access
- bronze
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Low-voltage polymer field-effect transistors for nonvolatile memories. https://app.cochat.ai/papers/10.1063/1.2132062
- The paper
- Naber, R. C. G., de Boer, B., Blom, P. W. M., & de Leeuw, D. M. (2005). Low-voltage polymer field-effect transistors for nonvolatile memories. Applied Physics Letters. https://doi.org/10.1063/1.2132062
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
