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Photodetectors based on treated CdSe quantum-dot films

Oertel, David C., Bawendi, Moungi G., Arango, Alexi C., Bulović, Vladimir·2005·Applied Physics Letters

Abstract

We demonstrate photodetectors of sandwich geometry active in the visible spectrum in which the active layer is a 200 nm thick film of CdSe quantum dots (QDs). The solution-phase treatment of the QD film with n-butylamine after casting greatly increases the exciton dissociation efficiency and charge-transport properties of the film. Under 110mW∕cm2 illumination with light at λ=514nm, the photocurrent to dark current ratio, Iphoto∕Idark, is 103 at V=0V, and the 3 dB frequency is ∼50kHz. At room temperature, we observe zero-bias external quantum efficiencies (EQE) from 0.08% to 0.23% in the wavelength range λ=350nm to λ=575nm, corresponding to an internal quantum efficiency (IQE) of 0.6±0.1% across the tested spectrum. At V=−6V, EQE ranges from 15% to 24%, corresponding to an IQE of 70±10%.

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Metadata

Authors
Oertel, D. C., Bawendi, M. G., Arango, A. C., & Bulović, V.
Venue
Applied Physics Letters
Published
2005-11-18
Volume
87
Issue
21
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2054592621
Cited by
260
References
0
FWCI
6.05
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Photodetectors based on treated CdSe quantum-dot films. https://app.cochat.ai/papers/10.1063/1.2136227
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Oertel, D. C., Bawendi, M. G., Arango, A. C., & Bulović, V. (2005). Photodetectors based on treated CdSe quantum-dot films. Applied Physics Letters. https://doi.org/10.1063/1.2136227

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