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Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
Abstract
The authors investigated the data retention properties of NiOy resistors exposed to sputtered particles and found that they depended on the bias polarity used to program the data. Only the data in the high resistance state programmed by applying positive bias to the top electrode were easily damaged. This suggests that the “reset” process can take place when the anodic side of the conductive filaments, which were formed during the “forming” process, is insulated. In addition, the data retention test for thermal stress suggests that the reset process can take place thermally.
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Citations
Cited by
Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack
Jeong, D. S., Schroeder, H., & Waser, R. (2007) · Electrochemical and Solid-State Letters · doi:10.1149/1.2742989 · Cited by 320
Growth, dielectric properties, and memory device applications of ZrO2 thin films
Panda, D., & Tseng, T.-Y. (2013) · Thin Solid Films · doi:10.1016/j.tsf.2013.01.004 · Cited by 300
Schindler, C., Valov, I., & Waser, R. (2009) · Physical Chemistry Chemical Physics · doi:10.1039/b901026b · Cited by 51
Metadata
- Authors
- Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., & Tanaka, H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2006-09-04
- Volume
- 89
- Issue
- 10
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2029998601
- Cited by
- 215
- References
- 0
- FWCI
- 20.24
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., & Tanaka, H. (2006). Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide. Applied Physics Letters. https://doi.org/10.1063/1.2339032
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