The DOI matches its Crossref record; 59 of the 59 references it cites were found in a registry or an index.
Growth, dielectric properties, and memory device applications of ZrO2 thin films
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Citations
Cites
High-κ gate dielectrics: Current status and materials properties considerations
Wilk, G. D., Wallace, R. M., & Anthony, J. M. (2001) · Journal of Applied Physics · doi:10.1063/1.1361065 · Cited by 5,924
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Takagi, S., Toriumi, A., Iwase, M., & Tango, H. (1994) · IEEE Transactions on Electron Devices · doi:10.1109/16.337449 · Cited by 1,492
Suntola, T. (1992) · Thin Solid Films · doi:10.1016/0040-6090(92)90874-b · Cited by 1,367
Thermodynamic stability of binary oxides in contact with silicon
Hubbard, K. J., & Schlom, D. G. (1996) · Journal of Materials Research · doi:10.1557/jmr.1996.0350 · Cited by 1,242
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.2001146 · Cited by 1,150
Reproducible resistance switching in polycrystalline NiO films
Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1831560 · Cited by 933
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Cited by
High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Wang, B., Huang, W., Chi, L., Al-Hashimi, M., Marks, T. J., & Facchetti, A. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00045 · Cited by 818
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Status and prospects of ZnO-based resistive switching memory devices
Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1570-y · Cited by 244
Self-citation
Metadata
- Authors
- Panda, D., & Tseng, T.-Y.
- Venue
- Thin Solid Films
- Publisher
- Elsevier BV
- Published
- 2013-03
- Volume
- 531
- Pages
- 1-20
- ISSN
- 0040-6090 (ISSN-L)
- OpenAlex
- W2163761283
- Cited by
- 300
- References
- 59
- FWCI
- 12.98
- Type
- journal article
- Language
- en
- Open access
- closed
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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- The paper
- Panda, D., & Tseng, T.-Y. (2013). Growth, dielectric properties, and memory device applications of ZrO2 thin films. Thin Solid Films. https://doi.org/10.1016/j.tsf.2013.01.004
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.