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Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses

Ielmini, Daniele, Zhang, Yuegang·2007·Applied Physics Letters

Abstract

The study of the temperature dependence of subthreshold conduction in amorphous chalcogenide materials reveals a voltage dependent activation energy, which can be attributed to trap-limited conduction. The authors find that the features of subthreshold conduction regime (subthreshold slope and activation energy) can be quantitatively explained by a simple conduction model for Poole-Frenkel transport in the presence of a high concentration of traps. This analysis allows for an accurate prediction of the temperature and voltage dependence of subthreshold current in amorphous chalcogenides, and offers a simple scheme for estimating the average distance between traps in the disordered material.

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Metadata

Authors
Ielmini, D., & Zhang, Y.
Venue
Applied Physics Letters
Published
2007-05-07
Volume
90
Issue
19
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2069394095
Cited by
202
References
0
FWCI
7.13
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses. https://app.cochat.ai/papers/10.1063/1.2737137
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Ielmini, D., & Zhang, Y. (2007). Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses. Applied Physics Letters. https://doi.org/10.1063/1.2737137

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