The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
Abstract
The authors demonstrate a thin, Ge-free III–V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1sun global spectrum, space spectrum, and concentrated direct spectrum at 81suns, respectively. The device consists of 1.8eV Ga0.5In0.5P, 1.4eV GaAs, and 1.0eV In0.3Ga0.7As p-n junctions grown monolithically in an inverted configuration on GaAs substrates by organometallic vapor phase epitaxy. The lattice-mismatched In0.3Ga0.7As junction was grown last on a graded GaxIn1−xP buffer. The substrate was removed after the structure was mounted to a structural “handle.” The current-matched, series-connected junctions produced a total open-circuit voltage over 2.95V at 1sun.
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Citations
Cites
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
King, R. R., Law, D. C., Edmondson, K. M., Fetzer, C. M., Kinsey, G. S., Yoon, H., Sherif, R. A., & Karam, N. H. (2007) · Applied Physics Letters · doi:10.1063/1.2734507 · Cited by 1,238
A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
Olson, J. M., Kurtz, S. R., Kibbler, A. E., & Faine, P. (1990) · Applied Physics Letters · doi:10.1063/1.102717 · Cited by 315
Self-citation
Cited by
III–V multijunction solar cells for concentrating photovoltaics
Cotal, H., Fetzer, C., Boisvert, J., Kinsey, G., King, R., Hebert, P., Yoon, H., & Karam, N. (2009) · Energy Environ. Sci. · doi:10.1039/b809257e · Cited by 559
Thermophotovoltaic efficiency of 40%
LaPotin, A., Schulte, K. L., Steiner, M. A., Buznitsky, K., Kelsall, C. C., Friedman, D. J., Tervo, E. J., France, R. M., Young, M. R., Rohskopf, A., et al. (2022) · Nature · doi:10.1038/s41586-022-04473-y · Cited by 336
Self-citationSpace Solar Cells – 3G30 and Next Generation Radiation Hard Products
Guter, W., Dunzer, F., Ebel, L., Hillerich, K., Köstler, W., Kubera, T., Meusel, M., Postels, B., & Wächter, C. (2017) · E3S Web of Conferences · doi:10.1051/e3sconf/20171603005 · Cited by 51
Metadata
- Authors
- Geisz, J. F., Kurtz, S., Wanlass, M. W., Ward, J. S., Duda, A., Friedman, D. J., Olson, J. M., McMahon, W. E., Moriarty, T. E., & Kiehl, J. T.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2007-07-09
- Volume
- 91
- Issue
- 2
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2021201233
- Cited by
- 398
- References
- 2
- FWCI
- 23.63
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Geisz, J. F., Kurtz, S., Wanlass, M. W., Ward, J. S., Duda, A., Friedman, D. J., Olson, J. M., McMahon, W. E., Moriarty, T. E., & Kiehl, J. T. (2007). High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction. Applied Physics Letters. https://doi.org/10.1063/1.2753729
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