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Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
Abstract
We present a facile route which combines the functionalization of a highly oriented pyrolytic graphite surface with an atomic layer deposition (ALD) process to allow for conformal Al2O3 layers. While the trimethylaluminum (TMA)∕H2O process caused selective deposition only along step edges, the TMA∕O3 process began to provide nucleation sites on the basal planes of the surface. O3 pretreatment, immediately followed by the ALD process with TMA∕O3 chemistry, formed Al2O3 layers without any preferential deposition at the step edges. This is attributed to functionalization of graphene by ozone treatment, imparting a hydrophilic character which is desirable for ALD deposition.
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Citations
Cites
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Cited by
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
Kim, S., Nah, J., Jo, I., Shahrjerdi, D., Colombo, L., Yao, Z., Tutuc, E., & Banerjee, S. K. (2009) · Applied Physics Letters · doi:10.1063/1.3077021 · Cited by 1,012
High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene
Liu, L., Zhou, H., Cheng, R., Yu, W. J., Liu, Y., Chen, Y., Shaw, J., Zhong, X., Huang, Y., & Duan, X. (2012) · ACS Nano · doi:10.1021/nn302918x · Cited by 282
Manipulating Thermal Conductance at Metal–Graphene Contacts via Chemical Functionalization
Hopkins, P. E., Baraket, M., Barnat, E. V., Beechem, T. E., Kearney, S. P., Duda, J. C., Robinson, J. T., & Walton, S. G. (2012) · Nano Letters · doi:10.1021/nl203060j · Cited by 265
Metadata
- Authors
- Lee, B., Park, S.-Y., Kim, H.-C., Cho, K., Vogel, E. M., Kim, M. J., Wallace, R. M., & Kim, J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2008-05-19
- Volume
- 92
- Issue
- 20
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2038293987
- Cited by
- 266
- References
- 1
- FWCI
- 18.83
- Type
- journal article
- Language
- en
- Open access
- closed
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- Lee, B., Park, S.-Y., Kim, H.-C., Cho, K., Vogel, E. M., Kim, M. J., Wallace, R. M., & Kim, J. (2008). Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics. Applied Physics Letters. https://doi.org/10.1063/1.2928228
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
