The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Electrically pumped ultraviolet ZnO diode lasers on Si
Abstract
Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-doped n-type ZnO with an MgZnO/ZnO/MgZnO quantum well embedded in the junction was grown on Si by molecular beam epitaxy. The diodes emit lasing at room temperature with a very low threshold injection current density of 10 A/cm2. The lasing mechanism is exciton-related recombination and the feedback is provided by close-loop scattering from closely packed nanocolumnar ZnO grains formed on Si.
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Cites
ZnO as a Material Mostly Adapted for the Realization of Room-Temperature Polariton Lasers
Zamfirescu, M., Kavokin, A., Gil, B., Malpuech, G., & Kaliteevski, M. (2002) · Physical Review B · doi:10.1103/physrevb.65.161205 · Cited by 395
Cited by
Speckle-free laser imaging using random laser illumination
Redding, B., Choma, M. A., & Cao, H. (2012) · Nature Photonics · doi:10.1038/nphoton.2012.90 · Cited by 1,050
65 years of ZnO research – old and very recent results
Klingshirn, C., Fallert, J., Zhou, H., Sartor, J., Thiele, C., Maier‐Flaig, F., Schneider, D., & Kalt, H. (2010) · physica status solidi (b) · doi:10.1002/pssb.200983195 · Cited by 406
Metadata
- Authors
- Chu, S., Olmedo, M., Yang, Z., Kong, J., & Liu, J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2008-11-03
- Volume
- 93
- Issue
- 18
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2141552132
- Cited by
- 294
- References
- 1
- FWCI
- 9.77
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chu, S., Olmedo, M., Yang, Z., Kong, J., & Liu, J. (2008). Electrically pumped ultraviolet ZnO diode lasers on Si. Applied Physics Letters. https://doi.org/10.1063/1.3012579
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