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Nanosecond switching in GeTe phase change memory cells
Abstract
The electrical switching behavior of GeTe-based phase change memory devices is characterized by time resolved experiments. SET pulses with a duration of less than 16 ns are shown to crystallize the material. Depending on the resistance of the RESET state, the minimum SET pulse duration can even be reduced down to 1 ns. This finding is attributed to the increasing impact of crystal growth upon decreasing switchable volume. Using GeTe or materials with similar crystal growth velocities, hence promises nonvolatile phase change memories with dynamic random access memorylike switching speeds.
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Cited by
Phase change memory technology
Burr, G. W., Breitwisch, M. J., Franceschini, M., Garetto, D., Gopalakrishnan, K., Jackson, B., Kurdi, B., Lam, C., Lastras, L. A., Padilla, A., et al. (2010) · Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena · doi:10.1116/1.3301579 · Cited by 916
Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
Xiong, F., Liao, A. D., Estrada, D., & Pop, E. (2011) · Science · doi:10.1126/science.1201938 · Cited by 532
Recent Progress in Phase-ChangeMemory Technology
Burr, G. W., BrightSky, M. J., Sebastian, A., Cheng, H.-Y., Wu, J.-Y., Kim, S., Sosa, N. E., Papandreou, N., Lung, H.-L., Pozidis, H., et al. (2016) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2016.2547718 · Cited by 393
Metadata
- Authors
- Bruns, G., Merkelbach, P., Schlockermann, C., Salinga, M., Wuttig, M., Happ, T. D., Philipp, J. B., & Kund, M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2009-07-27
- Volume
- 95
- Issue
- 4
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2078067390
- Cited by
- 463
- References
- 0
- FWCI
- 16.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- Bruns, G., Merkelbach, P., Schlockermann, C., Salinga, M., Wuttig, M., Happ, T. D., Philipp, J. B., & Kund, M. (2009). Nanosecond switching in GeTe phase change memory cells. Applied Physics Letters. https://doi.org/10.1063/1.3191670
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